Toshiba Semiconductor and Storage Productos

TPCC8003-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 13A 8TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 22W (Tc)
• Rds On (Max) @ Id, Vgs: 16.9 mOhm @ 6.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON
• Package / Case: 8-VDFN Exposed Pad

Paquete: 8-VDFN Exposed Pad

TPCA8064-H,LQ(CM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 20A 8SOP-ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
• Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

Paquete: 8-PowerVDFN

SSM3J35CTC,L3F

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 0.25A CST3C

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 150mA, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CST3C
• Package / Case: SC-101, SOT-883

Paquete: SC-101, SOT-883

TK39N60W,S1VF

Toshiba Semiconductor and Storage

MOSFET N CH 600V 38.8A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 270W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paquete: TO-247-3

2SA1587-BL,LF

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A USM

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 100MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

Paquete: SC-70, SOT-323

RN1117(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

Paquete: SC-75, SOT-416

HN1A01FE-GR,LF

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paquete: SOT-563, SOT-666

RN2711(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W USV

• Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

Paquete: 5-TSSOP, SC-70-5, SOT-353

HN1D03FTE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SC74

• Diode Configuration: 2 Pair CA + CC
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SC-74

Paquete: SC-74, SOT-457

1SS393,LF

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA SC70

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 40V
• Operating Temperature - Junction: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

Paquete: SC-70, SOT-323

TA78DS05CP,F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

Paquete: TO-226-3, TO-92-3 Long Body

TA58L05S,L2SUMIQ(M

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: 3-HSIP

Paquete: TO-220-3 Full Pack

TCR2EN32,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3.2V 200MA 4-SDFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 73dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

Paquete: 4-XFDFN Exposed Pad

TB67H301FTG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 24WQFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: BiCDMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1A
• Voltage - Supply: 3 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 38 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-WFQFN Exposed Pad
• Supplier Device Package: 24-WQFN (4x4)

Paquete: 24-WFQFN Exposed Pad

74HC237D(BJ)

Toshiba Semiconductor and Storage

IC 3:8 LINE DECODER 16SOIC

• Type: Decoder
• Circuit: 1 x 3:8
• Independent Circuits: 1
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

TC74HC573AF(EL,F)

Toshiba Semiconductor and Storage

IC OCTAL D-TYPE LATCH 20SOP

• Logic Type: D-Type Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 2 V ~ 6 V
• Independent Circuits: 1
• Delay Time - Propagation: 17ns
• Current - Output High, Low: 7.8mA, 7.8mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 20-SOP

Paquete: 20-SOIC (0.209", 5.30mm Width)

TC7SZ00FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP USV

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

Paquete: 5-TSSOP, SC-70-5, SOT-353

TC7SZ02F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP SMV

• Logic Type: NOR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

Paquete: SC-74A, SOT-753

74HC175D(BJ)

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 16SOIC

• Function: Master Reset
• Type: D-Type
• Output Type: Differential
• Number of Elements: 1
• Number of Bits per Element: 4
• Clock Frequency: 63MHz
• Max Propagation Delay @ V, Max CL: 24ns @ 6V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)

Paquete: 16-SOIC (0.154", 3.90mm Width)

TL1L4-NT0,LCS

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5700K 2SMD

• Color: White, Cool
• CCT (K): 5700K
• Flux @ 85°C, Current - Test: 145 lm (130 lm ~ 160 lm)
• Flux @ 25°C, Current - Test: -
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 148 lm/W
• CRI (Color Rendering Index): 70
• Current - Max: 1.5A
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.085" (2.15mm)

Paquete: 1414 (3535 Metric)

DF2B29FU,H3F

Toshiba Semiconductor and Storage

TVS DIODE 24VWM 47VC

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26V
• Voltage - Clamping (Max) @ Ipp: 47V
• Current - Peak Pulse (10/1000µs): 3A (8/20µs)
• Power - Peak Pulse: 140W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 9pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USC

Paquete: SC-70, SOT-323

DF2S5.6FS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 3.5VWM

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3.5V (Max)
• Voltage - Breakdown (Min): 5.3V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 40pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: SOD-923

Paquete: SOD-923

TLP227GA-2(TP1,F)

Toshiba Semiconductor and Storage

RELAY SOLID STATE 8-SMD

• Circuit: DPST (2 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 8-SMD (0.300", 7.62mm)
• Supplier Device Package: 8-SMD
• Relay Type: Relay

Paquete: 8-SMD (0.300", 7.62mm)

TLP3442(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 100MA 40V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 20 Ohm
• Load Current: 100mA
• Voltage - Input: 1.27VDC
• Voltage - Load: 0 ~ 40 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.096", 2.45mm)
• Supplier Device Package: 4-VSON
• Relay Type: Relay

Paquete: 4-SMD (0.096", 2.45mm)

TLP4176G(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 350V DUAL 4SOP

• Circuit: SPST-NC (1 Form B)
• Output Type: AC, DC
• On-State Resistance (Max): 25 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

Paquete: 4-SOP (0.173", 4.40mm)

TLP281(GB-TP,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRANS 4-SOP

• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.173", 4.40mm)
• Supplier Device Package: 4-SOP

Paquete: 4-SOIC (0.173", 4.40mm)

TLP331(BV,F)

Toshiba Semiconductor and Storage

OPTOISO 5KV TRANS W/BASE 6DIP

• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (Min): 200% @ 1mA
• Current Transfer Ratio (Max): 1200% @ 1mA
• Turn On / Turn Off Time (Typ): 10µs, 8µs
• Rise / Fall Time (Typ): 8µs, 8µs
• Input Type: DC
• Output Type: Transistor with Base
• Voltage - Output (Max): 55V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm)
• Supplier Device Package: 6-DIP

Paquete: 6-DIP (0.300", 7.62mm)

TLP184(GR-TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 300% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

Paquete: 6-SMD (4 Leads), Gull Wing

TLP108(F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL 6MFSOP-5

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 25mA
• Data Rate: 5Mbps
• Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
• Rise / Fall Time (Typ): 30ns, 30ns
• Voltage - Forward (Vf) (Typ): 1.57V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 20 V
• Operating Temperature: -40°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
• Supplier Device Package: 6-MFSOP, 5 Lead

Paquete: 6-SOIC (0.173", 4.40mm Width) 5 Leads

TLP251(TP1,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV GATE DRIVER 8SMD

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Common Mode Transient Immunity (Min): 5kV/µs
• Propagation Delay tpLH / tpHL (Max): 1µs, 1µs
• Pulse Width Distortion (Max): -
• Rise / Fall Time (Typ): -
• Current - Output High, Low: 100mA, 100mA
• Current - Peak Output: 400mA
• Voltage - Forward (Vf) (Typ): 1.6V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 10 V ~ 30 V
• Operating Temperature: -20°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Gull Wing
• Supplier Device Package: 8-SMD
• Approvals: UR

Paquete: 8-SMD, Gull Wing