Toshiba Semiconductor and Storage Productos

SSM3K17SU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 50V 100MA USM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1.5V @ 1µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 4V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: USM
• Package / Case: SC-70, SOT-323

Paquete: SC-70, SOT-323

2SK3844(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220NIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 23A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220NIS
• Package / Case: TO-220-3 Full Pack

Paquete: TO-220-3 Full Pack

TPC8129,LQ(S

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 9A 8SOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
• Vgs (Max): +20V, -25V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

TPC8207(TE12L,Q)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V
• Vgs(th) (Max) @ Id: 1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
• Power - Max: 450mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP (5.5x6.0)

Paquete: 8-SOIC (0.173", 4.40mm Width)

2SC2655-Y,T6APNF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

2SC2235-Y,T6ASHF(J

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

RN2316(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

Paquete: SC-70, SOT-323

RN2964(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W US6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: 6-TSSOP, SC-88, SOT-363

CLS03(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Capacitance @ Vr, F: 345pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: L-FLAT?
• Supplier Device Package: L-FLAT? (4x5.5)
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: L-FLAT?

1SS307(TE85L,F)

Toshiba Semiconductor and Storage

DIODE GEN PURP 30V 100MA SMINI

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 30V
• Capacitance @ Vr, F: 6pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini
• Operating Temperature - Junction: 125°C (Max)

Paquete: TO-236-3, SC-59, SOT-23-3

CUS05S30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA USC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 340mV @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 10V
• Capacitance @ Vr, F: 55pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: USC
• Operating Temperature - Junction: 125°C (Max)

Paquete: SC-76, SOD-323

1SS301,LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA USM

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

Paquete: SC-70, SOT-323

1SS309(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SMV

• Diode Configuration: 4 Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

Paquete: SC-74A, SOT-753

HN1D02FU,LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA US6

• Diode Configuration: 2 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: 6-TSSOP, SC-88, SOT-363

TA58L05S(LS2YAZ,AQ

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: 3-HSIP

Paquete: TO-220-3 Full Pack

TA4800AF(T6L1,Q)

Toshiba Semiconductor and Storage

IC REG LINEAR POS ADJ 1A 5HSIP

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 1.5V
• Voltage - Output (Max): 9V
• Voltage Dropout (Max): 0.5V @ 500mA
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.7mA ~ 20mA
• PSRR: 63dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-6, DPak (5 Leads + Tab)
• Supplier Device Package: 5-HSIP

Paquete: TO-252-6, DPak (5 Leads + Tab)

TCR2LN11,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 200MA 4-SDFN

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

Paquete: 4-XFDFN Exposed Pad

TCR2EN19,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.9V 200MA 4-SDFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 73dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

Paquete: 4-XFDFN Exposed Pad

TCK22975G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.1 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 25 mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Reverse Current
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UFBGA, WLCSP
• Supplier Device Package: 6-WCSPE (0.80x1.2)

Paquete: 6-UFBGA, WLCSP

TC7SZ04FU,LJ

Toshiba Semiconductor and Storage

IC INVERTER SINGLE USV

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

Paquete: 5-TSSOP, SC-70-5, SOT-353

TC7SZU04FE,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER UNBUFFERED ESV

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: ESV
• Package / Case: SOT-553

Paquete: SOT-553

TC74LCX245FTELM

Toshiba Semiconductor and Storage

IC BUS TRANSCEIVER 8BIT 20TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

Paquete: 20-TSSOP (0.173", 4.40mm Width)

TLP4227G-2(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 8-DIP

• Circuit: DPST (2 Form B)
• Output Type: AC, DC
• On-State Resistance (Max): 25 Ohm
• Load Current: 150mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Relay Type: Relay

Paquete: 8-DIP (0.300", 7.62mm)

TLP175A(TPL,E

Toshiba Semiconductor and Storage

PHOTO RELAY LOW TRIG CURR SO6

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 50 Ohm
• Load Current: 100mA
• Voltage - Input: 1.27VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead
• Relay Type: Relay

Paquete: 6-SMD (4 Leads), Gull Wing

TLP620-2(F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV 2CH TRANS 8-DIP

• Number of Channels: 2
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 55V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

Paquete: 8-DIP (0.300", 7.62mm)

TLP127TPRUF

Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV DARLNG 6-MFSOP

• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 1000% @ 1mA
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 50µs, 15µs
• Rise / Fall Time (Typ): 40µs, 15µs
• Input Type: DC
• Output Type: Darlington
• Voltage - Output (Max): 300V
• Current - Output / Channel: 150mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 1.2V
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-MFSOP, 4 Lead

Paquete: 6-SMD (4 Leads), Gull Wing

TLP2767(TP,E

Toshiba Semiconductor and Storage

OPTOISO 5KV TRI-STATE SO6L

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 25kV/µs
• Input Type: DC
• Output Type: Tri-State
• Current - Output / Channel: 10mA
• Data Rate: 50MBd
• Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
• Rise / Fall Time (Typ): 2ns, 1ns
• Voltage - Forward (Vf) (Typ): 1.6V
• Current - DC Forward (If) (Max): 15mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 6-SO

Paquete: 6-SOIC (0.295", 7.50mm Width)

TCK402G,LF

Toshiba Semiconductor and Storage

X34 LOAD SWITCH IC VIN:2.7-28V O

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: 6-UFBGA, WLCSP
• Supplier Device Package: 6-WCSP (1.2x0.80)

Paquete: 6-UFBGA, WLCSP

TB9061AFNG,EL

Toshiba Semiconductor and Storage

AUTOMOTIVE BLDC MOTOR CONTROLLER

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: -
• Voltage - Supply: 5.5V ~ 18V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-LSSOP (0.220", 5.60mm Width)
• Supplier Device Package: 24-SSOP

Paquete: 24-LSSOP (0.220", 5.60mm Width)

TCR2LN09,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=0.9V DROPOUT=200M

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.46V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

Paquete: 4-XFDFN Exposed Pad