Página 7 - Microsemi Corporation Productos - Transistores - Bipolar (BJT) - RF | Heisener Electronics
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Microsemi Corporation Productos - Transistores - Bipolar (BJT) - RF

Registros 296
Página  7/10
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MRF555T
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 12.5dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
Paquete: Power Macro
En existencias2.192
16V
-
-
11dB ~ 12.5dB
3W
50 @ 100mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
MRF555
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 13dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
Paquete: Power Macro
En existencias7.664
16V
-
-
11dB ~ 13dB
3W
30 @ 250mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
MRF553G
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 13dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
Paquete: Power Macro
En existencias4.320
16V
175MHz
-
11dB ~ 13dB
3W
30 @ 250mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
hot MRF544
Microsemi Corporation

TRANS NPN 70V 400MA TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 3.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-39
  • Supplier Device Package: TO-39
Paquete: TO-39
En existencias4.384
70V
1.5GHz
-
13.5dB
3.5W
15 @ 50mA, 6V
400mA
-
Through Hole
TO-39
TO-39
MDS1100
Microsemi Corporation

TRANS RF BIPO 8750W 100A 55TU1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.9dB
  • Power - Max: 8750W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 100A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 55TU-1
  • Supplier Device Package: 55TU-1
Paquete: 55TU-1
En existencias2.784
65V
1.03GHz
-
8.9dB
8750W
20 @ 5A, 5V
100A
200°C (TJ)
Surface Mount
55TU-1
55TU-1
TCS1200
Microsemi Corporation

TRANSISTOR BIPO 55TU-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.2dBd
  • Power - Max: 2095W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 60A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55TU-1
  • Supplier Device Package: 55TU-1
Paquete: 55TU-1
En existencias5.328
65V
1.03GHz
-
10.2dBd
2095W
20 @ 1A, 5V
60A
200°C (TJ)
Chassis Mount
55TU-1
55TU-1
TCS800
Microsemi Corporation

TRANS RF BIPO 1944W 50A 55SM1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9dB
  • Power - Max: 1944W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 230°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55SM
  • Supplier Device Package: 55SM
Paquete: 55SM
En existencias2.544
65V
1.03GHz
-
8dB ~ 9dB
1944W
20 @ 5A, 5V
50A
230°C (TJ)
Chassis Mount
55SM
55SM
ITC1100
Microsemi Corporation

TRANS RF BIPO 65V 80A 55SW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB ~ 10.5dB
  • Power - Max: 3400W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 80A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55SW
  • Supplier Device Package: 55SW
Paquete: 55SW
En existencias5.648
65V
1.03GHz
-
10dB ~ 10.5dB
3400W
10 @ 5A, 5V
80A
200°C (TJ)
Chassis Mount
55SW
55SW
TPR1000
Microsemi Corporation

TRANS RF BIPO 2900W 80A 55KV1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 2900W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 80A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KV
  • Supplier Device Package: 55KV
Paquete: 55KV
En existencias5.152
65V
1.09GHz
-
6dB
2900W
10 @ 1A, 5V
80A
200°C (TJ)
Chassis Mount
55KV
55KV
MDS800
Microsemi Corporation

TRANS RF BIPO 1458W 60A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.6dB
  • Power - Max: 1458W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 60A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
Paquete: 55ST-1
En existencias4.240
65V
1.09GHz
-
8.6dB
1458W
20 @ 1A, 5V
60A
200°C (TJ)
Chassis Mount
55ST-1
55ST-1
MDS500L
Microsemi Corporation

TRANS RF BIPO 833W 24A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.2dB
  • Power - Max: 833W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 24A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paquete: 55ST
En existencias7.872
70V
1.03GHz ~ 1.09GHz
-
9.2dB
833W
20 @ 1A, 5V
24A
200°C (TJ)
Chassis Mount
55ST
55ST
TAN500
Microsemi Corporation

TRANS RF BIPO 2500W 50A 55ST-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 2500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paquete: 55ST
En existencias5.792
75V
960MHz ~ 1.215GHz
-
9dB
2500W
20 @ 1A, 5V
50A
200°C (TJ)
Chassis Mount
55ST
55ST
TAN350
Microsemi Corporation

TRANS RF BIPO 1450W 40A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 7.5dB
  • Power - Max: 1450W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 230°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paquete: 55ST
En existencias7.328
65V
960MHz ~ 1.215GHz
-
7dB ~ 7.5dB
1450W
10 @ 1A, 5V
40A
230°C (TJ)
Chassis Mount
55ST
55ST
DME800
Microsemi Corporation

TRANS RF BIPO 2500 50A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 10dB
  • Power - Max: 2500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
Paquete: 55ST-1
En existencias4.624
65V
1.025GHz ~ 1.15GHz
-
9dB ~ 10dB
2500W
20 @ 600mA, 5V
50A
200°C (TJ)
Chassis Mount
55ST-1
55ST-1
10502
Microsemi Corporation

TRANS BIPO 50V 500W 55SM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB
  • Power - Max: 1458W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 230°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55SM
  • Supplier Device Package: 55SM
Paquete: 55SM
En existencias2.800
65V
-
-
8.5dB
1458W
20 @ 5A, 5V
40A
230°C (TJ)
Chassis Mount
55SM
55SM
1214-370M
Microsemi Corporation

TRANS RF BIPO 600W 25A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.7dB ~ 9dB
  • Power - Max: 600W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 25A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paquete: 55ST
En existencias3.424
75V
1.2GHz ~ 1.4GHz
-
8.7dB ~ 9dB
600W
10 @ 5A, 5V
25A
200°C (TJ)
Chassis Mount
55ST
55ST
1214-110M
Microsemi Corporation

TRANS RF BIPO 270W 8A 55KT1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.4dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
Paquete: 55KT
En existencias6.144
75V
1.2GHz ~ 1.4GHz
-
7.4dB
270W
-
8A
200°C (TJ)
Chassis Mount
55KT
55KT
0510-50A
Microsemi Corporation

TRANS RF BIPO 50W 1000MHZ 55AV2

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 27V
  • Frequency - Transition: 500MHz ~ 1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 50W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3.7A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AV
  • Supplier Device Package: 55AV
Paquete: 55AV
En existencias2.464
27V
500MHz ~ 1GHz
-
7dB
50W
10 @ 500mA, 5V
3.7A
200°C (TJ)
Chassis Mount
55AV
55AV
MS2200
Microsemi Corporation

TRANS RF BIPO 1167W 43.2A MS102

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 400MHz ~ 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.7dB
  • Power - Max: 1167W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 43.2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M102
  • Supplier Device Package: M102
Paquete: M102
En existencias7.408
65V
400MHz ~ 500MHz
-
9.7dB
1167W
20 @ 5A, 5V
43.2A
200°C (TJ)
Chassis Mount
M102
M102
1214-150L
Microsemi Corporation

TRANS BIPO 55ST-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.15dB ~ 8.7dB
  • Power - Max: 320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
Paquete: 55ST-1
En existencias6.992
65V
1.2GHz ~ 1.4GHz
-
7.15dB ~ 8.7dB
320W
20 @ 1A, 5V
15A
200°C (TJ)
Chassis Mount
55ST-1
55ST-1
1517-110M
Microsemi Corporation

TRANS RF BIPO 350W 9A 55AW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.48GHz ~ 1.65GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.3dB ~ 8.6dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 9A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW-1
  • Supplier Device Package: 55AW-1
Paquete: 55AW-1
En existencias7.568
70V
1.48GHz ~ 1.65GHz
-
7.3dB ~ 8.6dB
350W
20 @ 1A, 5V
9A
-
Chassis Mount
55AW-1
55AW-1
UTV8100B
Microsemi Corporation

TRANS RF BIPO 290W 15A 55RT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 9.5dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55RT
  • Supplier Device Package: 55RT
Paquete: 55RT
En existencias3.424
60V
470MHz ~ 860MHz
-
8.5dB ~ 9.5dB
290W
20 @ 1A, 5V
15A
200°C (TJ)
Chassis Mount
55RT
55RT
1214-300
Microsemi Corporation

TRANS RF BIPO 88W 4A 55KT

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 88W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
Paquete: 55KT
En existencias4.368
50V
1.2GHz ~ 1.4GHz
-
7dB
88W
20 @ 500mA, 5V
4A
200°C (TJ)
Chassis Mount
55KT
55KT
1214-300M
Microsemi Corporation

TRANS RF BIPO 88W 4A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 88W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paquete: 55ST
En existencias6.656
50V
1.2GHz ~ 1.4GHz
-
7dB
88W
20 @ 500mA, 5V
4A
200°C (TJ)
Chassis Mount
55ST
55ST
2731-100M
Microsemi Corporation

TRANS RF BIPO 575W 15A 55KS1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 2.7GHz ~ 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8db ~ 9.4dB
  • Power - Max: 575W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KS-1
  • Supplier Device Package: 55KS-1
Paquete: 55KS-1
En existencias3.248
65V
2.7GHz ~ 3.1GHz
-
8db ~ 9.4dB
575W
15 @ 600mA, 5V
15A
200°C (TJ)
Chassis Mount
55KS-1
55KS-1
TPR700
Microsemi Corporation

TRANS RF BIPO 2050W 55A 55KT1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.7dB
  • Power - Max: 2050W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 55A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
Paquete: 55KT
En existencias6.720
65V
1.03GHz ~ 1.09GHz
-
6.7dB
2050W
10 @ 1A, 5V
55A
200°C (TJ)
Chassis Mount
55KT
55KT
2729-170
Microsemi Corporation

TRANS RF BIPO 570W 17A 55KS1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 2.7GHz ~ 2.9GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.2dB ~ 8.6dB
  • Power - Max: 570W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 60mA, 5V
  • Current - Collector (Ic) (Max): 17A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KS-1
  • Supplier Device Package: 55KS-1
Paquete: 55KS-1
En existencias2.016
65V
2.7GHz ~ 2.9GHz
-
8.2dB ~ 8.6dB
570W
18 @ 60mA, 5V
17A
200°C (TJ)
Chassis Mount
55KS-1
55KS-1
0910-150M
Microsemi Corporation

TRAN RF BIPO 400W 1000MHZ 55KT1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 890MHz ~ 1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.1dB ~ 8.5dB
  • Power - Max: 400W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
Paquete: 55KT
En existencias2.592
65V
890MHz ~ 1GHz
-
8.1dB ~ 8.5dB
400W
-
12A
200°C (TJ)
Chassis Mount
55KT
55KT
1214-220M
Microsemi Corporation

TRANS RF BIPO 700W 20A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.4dB
  • Power - Max: 700W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paquete: 55ST
En existencias6.864
70V
1.2GHz ~ 1.4GHz
-
7.4dB
700W
10 @ 1A, 5V
20A
200°C (TJ)
Chassis Mount
55ST
55ST
0910-60M
Microsemi Corporation

TRAN RF BIPO 180W 1000MHZ 55AW

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 890MHz ~ 1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 8.5dB
  • Power - Max: 180W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
Paquete: 55AW
En existencias2.656
65V
890MHz ~ 1GHz
-
8dB ~ 8.5dB
180W
-
8A
200°C (TJ)
Chassis Mount
55AW
55AW