Página 5 - Microsemi Corporation Productos - Transistores - Bipolar (BJT) - RF | Heisener Electronics
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Microsemi Corporation Productos - Transistores - Bipolar (BJT) - RF

Registros 220
Página  5/8
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
UTV020
Microsemi Corporation

TRANS RF BIPO 17W 1.2A 55FT-6

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 17W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
Paquete: 55FT
En existencias3.360
25V
470MHz ~ 860MHz
-
12dB
17W
10 @ 250mA, 5V
1.2A
200°C (TJ)
Chassis, Stud Mount
55FT
55FT
UTV010
Microsemi Corporation

TRANS RF BIPO 15W 1.25A 55FT-5

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11.5dB
  • Power - Max: 15W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1.25A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
Paquete: 55FT
En existencias5.376
24V
470MHz ~ 860MHz
-
11.5dB
15W
15 @ 200mA, 5V
1.25A
200°C (TJ)
Chassis, Stud Mount
55FT
55FT
MSC1400M
Microsemi Corporation

TRANS RF BIPO 1000W 28A M216

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.5dB
  • Power - Max: 1000W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 28A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
Paquete: M216
En existencias5.584
65V
1.025GHz ~ 1.15GHz
-
6.5dB
1000W
15 @ 1A, 5V
28A
250°C (TJ)
Chassis Mount
M216
M216
MS1051
Microsemi Corporation

TRANS RF BIPO 290W 20A M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 13dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
Paquete: M174
En existencias6.624
18V
30MHz
-
11dB ~ 13dB
290W
10 @ 5mA, 5V
20A
200°C (TJ)
Chassis Mount
M174
M174
hot MRF586
Microsemi Corporation

TRANS RF BIPO 1W 200MA TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 17V
  • Frequency - Transition: 3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paquete: TO-205AD, TO-39-3 Metal Can
En existencias11.112
17V
3GHz
-
13.5dB
1W
40 @ 50mA, 5V
200mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
MRF545
Microsemi Corporation

TRANS RF BIPO 3.5W 400MA TO39

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB
  • Power - Max: 3.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paquete: TO-205AD, TO-39-3 Metal Can
En existencias3.168
70V
1GHz ~ 1.4GHz
-
14dB
3.5W
15 @ 50mA, 6V
400mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
0912-25
Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55CT1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 10dB
  • Power - Max: 125W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55CT
  • Supplier Device Package: 55CT
Paquete: 55CT
En existencias3.328
55V
960MHz ~ 1.215GHz
-
8.5dB ~ 10dB
125W
10 @ 300mA, 5V
2.5A
200°C (TJ)
Chassis Mount
55CT
55CT
MS2472
Microsemi Corporation

TRANS RF BIPO 1350W 40A M112

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 5.6dB
  • Power - Max: 1350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M112
  • Supplier Device Package: M112
Paquete: M112
En existencias2.864
65V
1.025GHz ~ 1.15GHz
-
5.6dB
1350W
5 @ 250mA, 5V
40A
200°C (TJ)
Chassis Mount
M112
M112
MRF581AG
Microsemi Corporation

TRANS RF NPN 5GHZ 15V MACR0 X

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Macro-X
  • Supplier Device Package: Macro-X
Paquete: Macro-X
En existencias5.744
15V
5GHz
3dB ~ 3.5dB @ 500MHz
13dB ~ 15.5dB
1.25W
90 @ 50mA, 5V
200mA
150°C (TJ)
Surface Mount
Macro-X
Macro-X
hot MRF5812GR1
Microsemi Corporation

TRANS NPN 15V 200MA 8-SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias12.312
15V
5GHz
2dB ~ 3dB @ 500MHz
13dB ~ 15.5dB
1.25W
50 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
MRF5812GR2
Microsemi Corporation

TRANS NPN 15V 200MA 8-SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias4.320
15V
5GHz
2dB ~ 3dB @ 500MHz
13dB ~ 15.5dB
1.25W
50 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot MRF904
Microsemi Corporation

TRANS NPN 15V 30MA TO-72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 450MHz
  • Gain: 6.5dB ~ 10.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
Paquete: TO-206AF, TO-72-4 Metal Can
En existencias12.960
15V
4GHz
1.5dB @ 450MHz
6.5dB ~ 10.5dB
200mW
30 @ 5mA, 5V
30mA
200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
hot MRF581G
Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Micro-X ceramic (84C)
  • Supplier Device Package: Micro-X ceramic (84C)
Paquete: Micro-X ceramic (84C)
En existencias250.548
18V
5GHz
3dB ~ 3.5dB @ 500MHz
13dB ~ 15.5dB
1.25W
50 @ 50mA, 5V
200mA
150°C (TJ)
Surface Mount
Micro-X ceramic (84C)
Micro-X ceramic (84C)
hot MRF581A
Microsemi Corporation

TRANS NPN 15V 200MA MACRO X

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Micro-X ceramic (84C)
  • Supplier Device Package: Micro-X ceramic (84C)
Paquete: Micro-X ceramic (84C)
En existencias48.072
15V
5GHz
3dB ~ 3.5dB @ 500MHz
13dB ~ 15.5dB
1.25W
90 @ 50mA, 5V
200mA
150°C (TJ)
Surface Mount
Micro-X ceramic (84C)
Micro-X ceramic (84C)
hot MRF581
Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Micro-X ceramic (84C)
  • Supplier Device Package: Micro-X ceramic (84C)
Paquete: Micro-X ceramic (84C)
En existencias5.808
18V
5GHz
3dB ~ 3.5dB @ 500MHz
13dB ~ 15.5dB
1.25W
50 @ 50mA, 5V
200mA
150°C (TJ)
Surface Mount
Micro-X ceramic (84C)
Micro-X ceramic (84C)
MRF559G
Microsemi Corporation

TRANS NPN 16V 150MA MACRO X

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Micro-X ceramic (84C)
  • Supplier Device Package: Micro-X ceramic (84C)
Paquete: Micro-X ceramic (84C)
En existencias4.992
16V
870MHz
-
9.5dB
2W
30 @ 50mA, 10V
150mA
-
Surface Mount
Micro-X ceramic (84C)
Micro-X ceramic (84C)
MRF555T
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 12.5dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
Paquete: Power Macro
En existencias2.192
16V
-
-
11dB ~ 12.5dB
3W
50 @ 100mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
MRF555
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 13dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
Paquete: Power Macro
En existencias7.664
16V
-
-
11dB ~ 13dB
3W
30 @ 250mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
MRF553G
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 13dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
Paquete: Power Macro
En existencias4.320
16V
175MHz
-
11dB ~ 13dB
3W
30 @ 250mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
hot MRF544
Microsemi Corporation

TRANS NPN 70V 400MA TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 3.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-39
  • Supplier Device Package: TO-39
Paquete: TO-39
En existencias4.384
70V
1.5GHz
-
13.5dB
3.5W
15 @ 50mA, 6V
400mA
-
Through Hole
TO-39
TO-39
MDS1100
Microsemi Corporation

TRANS RF BIPO 8750W 100A 55TU1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.9dB
  • Power - Max: 8750W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 100A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 55TU-1
  • Supplier Device Package: 55TU-1
Paquete: 55TU-1
En existencias2.784
65V
1.03GHz
-
8.9dB
8750W
20 @ 5A, 5V
100A
200°C (TJ)
Surface Mount
55TU-1
55TU-1
TCS1200
Microsemi Corporation

TRANSISTOR BIPO 55TU-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.2dBd
  • Power - Max: 2095W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 60A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55TU-1
  • Supplier Device Package: 55TU-1
Paquete: 55TU-1
En existencias5.328
65V
1.03GHz
-
10.2dBd
2095W
20 @ 1A, 5V
60A
200°C (TJ)
Chassis Mount
55TU-1
55TU-1
TCS800
Microsemi Corporation

TRANS RF BIPO 1944W 50A 55SM1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9dB
  • Power - Max: 1944W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 230°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55SM
  • Supplier Device Package: 55SM
Paquete: 55SM
En existencias2.544
65V
1.03GHz
-
8dB ~ 9dB
1944W
20 @ 5A, 5V
50A
230°C (TJ)
Chassis Mount
55SM
55SM
ITC1100
Microsemi Corporation

TRANS RF BIPO 65V 80A 55SW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB ~ 10.5dB
  • Power - Max: 3400W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 80A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55SW
  • Supplier Device Package: 55SW
Paquete: 55SW
En existencias5.648
65V
1.03GHz
-
10dB ~ 10.5dB
3400W
10 @ 5A, 5V
80A
200°C (TJ)
Chassis Mount
55SW
55SW
TPR1000
Microsemi Corporation

TRANS RF BIPO 2900W 80A 55KV1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 2900W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 80A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KV
  • Supplier Device Package: 55KV
Paquete: 55KV
En existencias5.152
65V
1.09GHz
-
6dB
2900W
10 @ 1A, 5V
80A
200°C (TJ)
Chassis Mount
55KV
55KV
MDS800
Microsemi Corporation

TRANS RF BIPO 1458W 60A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.6dB
  • Power - Max: 1458W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 60A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
Paquete: 55ST-1
En existencias4.240
65V
1.09GHz
-
8.6dB
1458W
20 @ 1A, 5V
60A
200°C (TJ)
Chassis Mount
55ST-1
55ST-1
MDS500L
Microsemi Corporation

TRANS RF BIPO 833W 24A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.2dB
  • Power - Max: 833W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 24A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paquete: 55ST
En existencias7.872
70V
1.03GHz ~ 1.09GHz
-
9.2dB
833W
20 @ 1A, 5V
24A
200°C (TJ)
Chassis Mount
55ST
55ST
TAN500
Microsemi Corporation

TRANS RF BIPO 2500W 50A 55ST-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 2500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paquete: 55ST
En existencias5.792
75V
960MHz ~ 1.215GHz
-
9dB
2500W
20 @ 1A, 5V
50A
200°C (TJ)
Chassis Mount
55ST
55ST
TAN350
Microsemi Corporation

TRANS RF BIPO 1450W 40A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 7.5dB
  • Power - Max: 1450W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 230°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paquete: 55ST
En existencias7.328
65V
960MHz ~ 1.215GHz
-
7dB ~ 7.5dB
1450W
10 @ 1A, 5V
40A
230°C (TJ)
Chassis Mount
55ST
55ST
DME800
Microsemi Corporation

TRANS RF BIPO 2500 50A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 10dB
  • Power - Max: 2500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
Paquete: 55ST-1
En existencias4.624
65V
1.025GHz ~ 1.15GHz
-
9dB ~ 10dB
2500W
20 @ 600mA, 5V
50A
200°C (TJ)
Chassis Mount
55ST-1
55ST-1