Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 12V 10A 8-TSSOP
|
Paquete: 8-TSSOP (0.173", 4.40mm Width) |
En existencias27.852 |
|
MOSFET (Metal Oxide) | 12V | 10A (Tc) | 1.8V, 4.5V | 1.2V @ 250µA | 100nC @ 4.5V | 5050pF @ 10V | ±8V | - | 1.5W (Ta) | 11 mOhm @ 10A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias6.592 |
|
MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | ±20V | - | 40W (Tc) | 480 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 190V 0.95A SC70-6
|
Paquete: PowerPAK? SC-70-6 Dual |
En existencias4.496 |
|
MOSFET (Metal Oxide) | 190V | 950mA (Tc) | 1.8V, 4.5V | 1.4V @ 250µA | 4.5nC @ 10V | 90pF @ 100V | ±16V | Schottky Diode (Isolated) | 1.9W (Ta), 7W (Tc) | 3.8 Ohm @ 360mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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NXP |
MOSFET N-CH 75V 21.4A LFPAK
|
Paquete: SC-100, SOT-669 |
En existencias4.832 |
|
MOSFET (Metal Oxide) | 75V | 21.4A (Tc) | 10V | 4V @ 1mA | 12nC @ 10V | 803pF @ 25V | ±20V | - | 59W (Tc) | 54 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 200V 1.8A TO-220AB
|
Paquete: TO-220-3 |
En existencias136.392 |
|
MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | ±20V | - | 20W (Tc) | 3 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
HIGH POWER_NEW
|
Paquete: - |
En existencias6.624 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-262
|
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA |
En existencias7.664 |
|
MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 380 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC
|
Paquete: TO-247-3 |
En existencias16.068 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 3600pF @ 25V | ±30V | - | 280W (Tc) | 270 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 24A ISOPLUS247
|
Paquete: ISOPLUS247? |
En existencias7.264 |
|
MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 5V @ 4mA | 98nC @ 10V | 5440pF @ 25V | ±30V | - | 208W (Tc) | 150 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
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Vishay Siliconix |
MOSFET N-CH 40V 110A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias6.256 |
|
MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 6500pF @ 25V | ±20V | - | 3.75W (Ta), 375W (Tc) | 3.1 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 120V 14A TO-220
|
Paquete: TO-220-3 |
En existencias72.084 |
|
MOSFET (Metal Oxide) | 120V | 14A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 460pF @ 25V | ±20V | - | 60W (Tc) | 180 mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 12V 34A 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias35.316 |
|
MOSFET (Metal Oxide) | 12V | 34A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 84nC @ 4.5V | 5760pF @ 6V | ±8V | - | 2.5W (Ta), 5.7W (Tc) | 2.7 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N CH 60V 173A TO-220AB
|
Paquete: TO-220-3 |
En existencias7.840 |
|
MOSFET (Metal Oxide) | 60V | 173A (Tc) | 6V, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | ±20V | - | 230W (Tc) | 3.3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 20A HSOF-8
|
Paquete: 8-PowerSFN |
En existencias6.032 |
|
MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 4V @ 320µA | 27nC @ 10V | 1080pF @ 400V | ±20V | - | 120W (Tc) | 125 mOhm @ 6.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8 | 8-PowerSFN |
||
IXYS |
MOSFET N-CH 500V 3A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias10.152 |
|
MOSFET (Metal Oxide) | 500V | 3A (Tc) | - | - | 40nC @ 5V | 1070pF @ 25V | ±20V | Depletion Mode | 125W (Tc) | 1.5 Ohm @ 1.5A, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A TDSON-8
|
Paquete: 8-PowerTDFN |
En existencias19.092 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta), 80A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 35nC @ 10V | 2800pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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NEC Corporation |
70A, 60V, N-CHANNEL MOSFET
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 70A (Tc) | 4V, 10V | 2V @ 1mA | - | 8500 pF @ 10 V | ±20V | - | 125W (Tc) | 7mOhm @ 36A, 10V | -55°C ~ 150°C | Through Hole | TO-220 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 20V 1.8A 6UDFN
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 1.8A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 2.8 nC @ 10 V | 130 pF @ 10 V | ±12V | - | 450mW (Ta) | 100mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN1616-6 (Type K) | 6-PowerUFDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 23A/79.4A PPAK
|
Paquete: - |
En existencias33.279 |
|
MOSFET (Metal Oxide) | 60 V | 23A (Ta), 79.4A (Tc) | 6V, 10V | 3.6V @ 250µA | 37 nC @ 10 V | 1710 pF @ 30 V | ±20V | - | 5W (Ta), 57W (Tc) | 4.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 153 nC @ 10 V | 4400 pF @ 25 V | ±16V | - | 310W (Tc) | 14mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Goford Semiconductor |
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
|
Paquete: - |
En existencias22.605 |
|
MOSFET (Metal Oxide) | 40 V | 26A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 45 nC @ 10 V | 2479 pF @ 20 V | ±20V | - | 50W (Tc) | 18mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (4.9x5.75) | 8-PowerTDFN |
||
Transphorm |
650 V 29 A GAN FET
|
Paquete: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 650 V | 29A (Tc) | 10V | 4.8V @ 700µA | 8.4 nC @ 10 V | 600 pF @ 400 V | ±20V | - | 96W (Tc) | 85mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL | 8-PowerSFN |
||
onsemi |
MOSFET N-CH 650V 10A TO220-3
|
Paquete: - |
En existencias1.221 |
|
MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 4.5V @ 1mA | 18 nC @ 10 V | 730 pF @ 400 V | ±30V | - | 83W (Tc) | 360mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 21A TO220-3
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 21A (Tc) | 10V | 4V @ 1mA | - | 1900 pF @ 25 V | ±20V | - | 125W (Tc) | 130mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
onsemi |
MOSFET N-CH
|
Paquete: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.9A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 13.4 nC @ 10 V | 563 pF @ 25 V | ±20V | - | 1W | 65mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 4A TO252
|
Paquete: - |
En existencias7.500 |
|
MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 15V | 7V @ 450µA | 10.5 nC @ 15 V | 260 pF @ 100 V | ±30V | - | 60W (Tc) | 1.43Ohm @ 2A, 15V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 60V 9.7A TO252-3
|
Paquete: - |
En existencias27.663 |
|
MOSFET (Metal Oxide) | 60 V | 9.7A (Tc) | 4.5V, 10V | 2V @ 250µA | 21 nC @ 10 V | 450 pF @ 25 V | ±20V | - | 42W (Tc) | 250mOhm @ 6.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 5.7A SOT23-3
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 5.7A (Ta) | 2.5V, 10V | 1.45V @ 250µA | 10 nC @ 4.5 V | 630 pF @ 15 V | ±12V | - | 1.4W (Ta) | 26.5mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | 3-SMD, SOT-23-3 Variant |
||
Nexperia USA Inc. |
SINGLE N-CHANNEL 60 V, 5.6 MOHM
|
Paquete: - |
En existencias8.964 |
|
MOSFET (Metal Oxide) | 60 V | 110A (Ta) | 4.5V, 10V | 2.1V @ 1mA | 123 nC @ 10 V | 6695 pF @ 25 V | ±10V | - | 194W (Ta) | 5.6mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |