Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 8.7A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias4.176 |
|
MOSFET (Metal Oxide) | 100V | 8.7A (Tc) | 10V | 4V @ 25µA | 10nC @ 10V | 310pF @ 25V | ±20V | - | 35W (Tc) | 190 mOhm @ 5.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 100V 95A TO263-3
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias6.208 |
|
MOSFET (Metal Oxide) | 100V | 95A (Tc) | 10V | 4V @ 130µA | 100nC @ 10V | 6660pF @ 50V | ±20V | - | 167W (Tc) | 8.2 mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET
|
Paquete: DirectFET? Isometric SQ |
En existencias6.432 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta), 60A (Tc) | 4.5V, 10V | 2.4V @ 25µA | 17nC @ 4.5V | 1430pF @ 15V | ±20V | - | 2.2W (Ta), 42W (Tc) | 7.3 mOhm @ 14A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SQ | DirectFET? Isometric SQ |
||
Infineon Technologies |
MOSFET N-CH 20V 54A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias3.184 |
|
MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 3V @ 250µA | 17nC @ 4.5V | 1060pF @ 10V | ±20V | - | 3.8W (Ta), 71W (Tc) | 14 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 12.7A 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias3.104 |
|
MOSFET (Metal Oxide) | 30V | 12.7A (Ta) | 4.5V, 10V | 2V @ 55µA | 26.2nC @ 5V | 1640pF @ 25V | ±20V | - | 2.5W (Ta) | 10 mOhm @ 12.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 50V 100MA CP3
|
Paquete: - |
En existencias3.760 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 8DFN
|
Paquete: 8-VDFN Exposed Pad |
En existencias6.416 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) | 8-VDFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH 100V 1.69A
|
Paquete: TO-205AF Metal Can |
En existencias6.928 |
|
MOSFET (Metal Oxide) | 100V | 1.69A (Tc) | 5V | 2V @ 1mA | 5nC @ 5V | - | ±10V | - | 8.33W (Tc) | 1.4 Ohm @ 1.07A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AF Metal Can |
||
ON Semiconductor |
MOSFET N-CH 600V 5A ATPAK
|
Paquete: ATPAK (2 leads+tab) |
En existencias7.856 |
|
MOSFET (Metal Oxide) | 600V | 5A (Ta) | 10V | - | 13.6nC @ 10V | 350pF @ 30V | ±30V | - | 70W (Tc) | 2.7 Ohm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 1.7A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias93.768 |
|
MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | ±30V | - | 2.5W (Ta), 50W (Tc) | 7.2 Ohm @ 850mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
NXP |
MOSFET N-CH 55V 75A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias4.864 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | - | 4500pF @ 25V | ±16V | - | 187W (Tc) | 8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
MOSFET N-CH 450V 5A TO-220FN
|
Paquete: TO-220-3 Full Pack |
En existencias3.696 |
|
MOSFET (Metal Oxide) | 450V | 5A (Ta) | 10V | 4V @ 1mA | - | 600pF @ 10V | ±30V | - | 30W (Tc) | 1.4 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET P-CH 400V 1.8A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias769.644 |
|
MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 270pF @ 25V | ±20V | - | 50W (Tc) | 7 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias1.084.020 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 130W (Tc) | 180 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 9.2A TO220
|
Paquete: TO-220-3 Full Pack |
En existencias3.024 |
|
MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 3.5V @ 280µA | 28nC @ 10V | 620pF @ 100V | ±20V | - | 30W (Tc) | 450 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 55V 50A TO252-3
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias7.360 |
|
MOSFET (Metal Oxide) | 55V | 50A (Tc) | 10V | 4V @ 80µA | 52nC @ 10V | 1485pF @ 25V | ±20V | - | 136W (Tc) | 14.4 mOhm @ 32A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 42A TO-220
|
Paquete: TO-220-3 Full Pack, Isolated Tab |
En existencias7.520 |
|
MOSFET (Metal Oxide) | 120V | 42A (Tc) | 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | ±20V | - | 35W (Tc) | 9.4 mOhm @ 21A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Renesas Electronics America |
MOSFET N-CH 30V 45A LFPAK
|
Paquete: SC-100, SOT-669 |
En existencias2.048 |
|
MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | - | 27nC @ 4.5V | 4400pF @ 10V | ±20V | - | 25W (Tc) | 3.8 mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
||
Sanken |
MOSFET N-CH 100V 5A 8DFN
|
Paquete: 8-PowerTDFN |
En existencias5.424 |
|
MOSFET (Metal Oxide) | 100V | 5A (Ta) | 4.5V, 10V | 2.5V @ 650µA | 35.8nC @ 10V | 2540pF @ 25V | ±20V | - | 3.1W (Ta), 59W (Tc) | 28 mOhm @ 14.2A, 10V | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET P-CH 30V 5A CPH6
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias7.280 |
|
MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | - | 10nC @ 10V | 430pF @ 10V | ±20V | - | 1.6W (Ta) | 59 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
||
Infineon Technologies |
MOSFET N-CH 600V TO247-3
|
Paquete: TO-247-3 |
En existencias10.560 |
|
MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 4.5V @ 430µA | 25.5nC @ 10V | 1190pF @ 100V | ±20V | - | 104W (Tc) | 280 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR TO-220SIS PD
|
Paquete: TO-220-3 Full Pack |
En existencias7.764 |
|
MOSFET (Metal Oxide) | 650V | 11.5A (Tc) | 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | ±30V | - | 35W (Tc) | 290 mOhm @ 5.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 120A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias5.152 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 5V | 2.1V @ 1mA | 95nC @ 5V | 13490pF @ 25V | ±10V | - | 293W (Tc) | 3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 16A TSDSON-8
|
Paquete: 8-PowerTDFN |
En existencias40.104 |
|
MOSFET (Metal Oxide) | 25V | 16A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 16nC @ 10V | 1200pF @ 12V | ±20V | - | 2.1W (Ta), 37W (Tc) | 3.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
EPC |
TRANS GAN 60V 60A BUMPED DIE
|
Paquete: Die |
En existencias5.840 |
|
GaNFET (Gallium Nitride) | 60V | 60A (Ta) | 5V | 2.5V @ 16mA | 16nC @ 5V | 1800pF @ 30V | +6V, -4V | - | - | 2.2 mOhm @ 31A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 32A DFN
|
Paquete: 8-PowerSMD, Flat Leads |
En existencias5.280 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta), 70A (Tc) | 4.5V, 10V | 1.9V @ 250µA | 23nC @ 10V | 1350pF @ 15V | ±12V | - | 6.2W (Ta), 31W (Tc) | 3.9 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Diodes Incorporated |
MOSFET N-CH 30V 6.6A 6-SOT26
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias7.344 |
|
MOSFET (Metal Oxide) | 30V | 6.6A (Ta) | 4.5V, 10V | 2V @ 250µA | 12.5nC @ 10V | 643pF @ 15V | ±20V | - | 1.2W (Ta) | 23 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
MOSFET N-CH 400V 3.1A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias25.362 |
|
MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 350pF @ 25V | ±20V | - | 42W (Tc) | 1.8 Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 50A DP TO252-3
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias35.610 |
|
MOSFET (Metal Oxide) | 40V | 50A (Ta) | 4.5V, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | ±20V | - | 60W (Tc) | 8.7 mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 120A TO220AB
|
Paquete: TO-220-3 |
En existencias14.772 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 126nC @ 10V | 11113pF @ 30V | ±20V | - | 375W (Tc) | 2.3 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |