Microchip has introduced and expanded its silicon carbide product line with a high efficiency and high reliability series of 1700V silicon carbide MOSFET molds, discrete and power modules
The size and weight of power electronics systems are inflated by transformers, which can only be reduced by increasing the switching frequency. In addition, this 1700V silicon carbide technology is an alternative to silicon IGBT. Due to the limited switching frequency of silicon consuming IGBTs, early technologies required designers to sacrifice performance and use complex topologies
In the absence of limit switch, the power conversion unit can significantly reduce the size and weight, make room for more charging stations, pay extra space for passengers and cargo, or increase the heavy vehicles, electric buses and other batteries mileage and running time of commercial vehicles - all of which reduce the overall system cost. And the new product family enables engineers to go beyond IGBT and interchangeably use a two-tier topology with a reduced number of parts, higher efficiency, and a simpler control scheme.
Leon Gross, vice president of Microchip's discrete products business unit said："Systems developers in the transportation space are constantly being asked to pack more people and goods into vehicles that can't be made bigger," "The best way to help achieve this is One way is by drastically reducing the size and weight of power conversion equipment that uses high-voltage silicon carbide power equipment. These advantages in transportation bring similar benefits to many other industrial applications."
R-uis tests also demonstrated excellent avalanche strength and parameter stability, as well as gate oxide stability, demonstrating reliable operation of the system throughout its life cycle. Features include gate oxide stability, and no threshold voltage change was detected even at 100,000 pulses in repeated no-clamp inductive switches (R-UIS) tests
This non-falling disintegrating diode eliminates the need to use an external diode for a silicon carbide MOSFET. Short circuit resistance comparable to IGBT can survive harmful electrical transients. At junction temperatures from 0℃ to 175C, the flatter RDS(ON) curve enables the power system to exhibit stronger temperature sensitivity and greater stability than other silicon carbide MOSFets.
These gate drivers help speed the development of silicon carbide from benchtop to production. The company has simplified the adoption of its technology with a range of AgileSwitch digital programmable gate drivers and a variety of discrete and power module packages available in standard and customizable formats.
