Vishay Siliconix Productos

SUD45P03-15-E3

Vishay Siliconix

MOSFET P-CH 30V TO252

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4W (Ta), 70W (Tc)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

SI6473DQ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 6.2A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.08W (Ta)
• Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

Paquete: 8-TSSOP (0.173", 4.40mm Width)

SI5857DU-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 6A PPAK CHIPFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 2.3W (Ta), 10.4W (Tc)
• Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? ChipFet Dual
• Package / Case: PowerPAK? ChipFET? Dual

Paquete: PowerPAK? ChipFET? Dual

IRFU4105ZTRR

Vishay Siliconix

MOSFET N-CH 55V 30A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251AA
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paquete: TO-251-3 Short Leads, IPak, TO-251AA

IRFI520G

Vishay Siliconix

MOSFET N-CH 100V 7.2A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.3A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paquete: TO-220-3 Full Pack, Isolated Tab

IRFPC60LC

Vishay Siliconix

MOSFET N-CH 600V 16A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 280W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 9.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paquete: TO-247-3

IRFPC40

Vishay Siliconix

MOSFET N-CH 600V 6.8A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paquete: TO-247-3

IRF740AS

Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLR120TRRPBF

Vishay Siliconix

MOSFET N-CH 100V 7.7A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

SI8473EDB-T1-E1

Vishay Siliconix

MOSFET P-CH 20V MICROFOOT

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
• Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-Microfoot
• Package / Case: 4-XFBGA, CSPBGA

Paquete: 4-XFBGA, CSPBGA

SIJ482DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 80V 60A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
• Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

Paquete: PowerPAK? SO-8

SI2334DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 4.9A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
• Rds On (Max) @ Id, Vgs: 44 mOhm @ 4.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

SI3442CDV-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 8A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paquete: SOT-23-6 Thin, TSOT-23-6

IRFD420PBF

Vishay Siliconix

MOSFET N-CH 500V 370MA 4-DIP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 220mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: 4-DIP, Hexdip, HVMDIP
• Package / Case: 4-DIP (0.300", 7.62mm)

Paquete: 4-DIP (0.300", 7.62mm)

IRFP260PBF

Vishay Siliconix

MOSFET N-CH 200V 46A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 280W (Tc)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 28A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paquete: TO-247-3

SI7460DP-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 11A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

Paquete: PowerPAK? SO-8

SI1902CDL-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.1A SC-70-6

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.1A
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
• Power - Max: 420mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-70-6 (SOT-363)

Paquete: 6-TSSOP, SC-88, SOT-363

SI5908DC-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.4A 1206-8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.4A
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: 1206-8 ChipFET?

Paquete: 8-SMD, Flat Lead

SIP21107DT-30-E3

Vishay Siliconix

IC REG LINEAR 3V 150MA TSOT23-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.22V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 85µA
• PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
• Control Features: Enable, Power Good
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-5 Thin, TSOT-23-5
• Supplier Device Package: TSOT-23-5

Paquete: SOT-23-5 Thin, TSOT-23-5

SJM187BCC

Vishay Siliconix

IC ANALOG SWITCH

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: -
• Number of Circuits: -
• On-State Resistance (Max): -
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): -
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): -
• Current - Leakage (IS(off)) (Max): -
• Crosstalk: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

DG2711DL-T1-GE3

Vishay Siliconix

IC MUX/SW ANLG LV CMOS SC70-6

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 1
• On-State Resistance (Max): 600 mOhm
• Channel-to-Channel Matching (ΔRon): 70 mOhm (Max)
• Voltage - Supply, Single (V+): 1.6 V ~ 3.6 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 46ns, 38ns
• -3db Bandwidth: -
• Charge Injection: 28pC
• Channel Capacitance (CS(off), CD(off)): 70pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -56dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-70-6

Paquete: 6-TSSOP, SC-88, SOT-363

DG641DY-E3

Vishay Siliconix

IC VIDEO SWITCH SPDT 16DSOIC

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 15 Ohm
• Channel-to-Channel Matching (ΔRon): 1 Ohm
• Voltage - Supply, Single (V+): 3 V ~ 15 V
• Voltage - Supply, Dual (V±): ±3 V ~ 15 V
• Switch Time (Ton, Toff) (Max): 70ns, 50ns
• -3db Bandwidth: 500MHz
• Charge Injection: 19pC
• Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
• Current - Leakage (IS(off)) (Max): 10nA
• Crosstalk: -87dB @ 5MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

DG9053DQ-T1-E3

Vishay Siliconix

IC MULTIPLEXER TRPL 2X1 16TSSOP

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 3
• On-State Resistance (Max): 40 Ohm
• Channel-to-Channel Matching (ΔRon): 5 Ohm (Max)
• Voltage - Supply, Single (V+): 2.7 V ~ 12 V
• Voltage - Supply, Dual (V±): ±2.7 V ~ 6 V
• Switch Time (Ton, Toff) (Max): 35ns, 30ns
• -3db Bandwidth: -
• Charge Injection: 38pC
• Channel Capacitance (CS(off), CD(off)): 4pF, 8pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -83dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

Paquete: 16-TSSOP (0.173", 4.40mm Width)

DG406BDW-E3

Vishay Siliconix

IC ANALOG SWITCH SPDT 28SOIC

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 16:1
• Number of Circuits: 1
• On-State Resistance (Max): 60 Ohm
• Channel-to-Channel Matching (ΔRon): 3 Ohm
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 107ns, 88ns
• -3db Bandwidth: -
• Charge Injection: 11pC
• Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

Paquete: 28-SOIC (0.295", 7.50mm Width)

DG271BDY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 50 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 65ns, 65ns
• -3db Bandwidth: -
• Charge Injection: -5pC
• Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -100dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

DG212BDY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 85 Ohm
• Channel-to-Channel Matching (ΔRon): 2 Ohm
• Voltage - Supply, Single (V+): 4.5 V ~ 25 V
• Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V
• Switch Time (Ton, Toff) (Max): 300ns, 200ns
• -3db Bandwidth: -
• Charge Injection: 1pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -95dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

DG309CJ-E3

Vishay Siliconix

IC SWITCH QUAD SPST/CMOS 16DIP

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 85 Ohm
• Channel-to-Channel Matching (ΔRon): 1.7 Ohm
• Voltage - Supply, Single (V+): 4 V ~ 44 V
• Voltage - Supply, Dual (V±): ±4 V ~ 22 V
• Switch Time (Ton, Toff) (Max): 200ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 1pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -95dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-PDIP

Paquete: 16-DIP (0.300", 7.62mm)

DG542DY-T1

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

• Applications: Video
• Multiplexer/Demultiplexer Circuit: 1:1
• Switch Circuit: SPST
• Number of Channels: 4
• On-State Resistance (Max): 60 Ohm
• Voltage - Supply, Single (V+): 3 V ~ 15 V
• Voltage - Supply, Dual (V±): ±3 V ~ 15 V
• -3db Bandwidth: 500MHz
• Features: RGB, T-Switch Configuration
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

SIC788CD-T1-GE3

Vishay Siliconix

50A VRPOWER INTEGRATED POWER ST

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): -
• Current - Output / Channel: 50A
• Current - Peak Output: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit, Diode Emulation, Status Flag
• Fault Protection: Over Temperature, Shoot-Through, UVLO
• Mounting Type: Surface Mount
• Package / Case: 40-PowerWFQFN Module
• Supplier Device Package: PowerPAK® MLP66-40

Paquete: 40-PowerWFQFN Module

SIP32103DB-T1-GE1

Vishay Siliconix

BI-DIRECTIONAL BATTERY LOAD SWIT

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 2.3 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 7A
• Rds On (Typ): 6.5 mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 12-UFBGA, CSPBGA
• Supplier Device Package: 12-WCSP (1.71x1.31)

Paquete: 12-UFBGA, CSPBGA