Página 177 - Vishay Semiconductor Diodes Division Productos - Diodos - Rectificadores
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Vishay Semiconductor Diodes Division Productos - Diodos - Rectificadores
- Simple

Registros 10.373
Página  177/371
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SS12P2L-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 12A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: 930pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-277, 3-PowerDFN
En existencias7.840
20V
12A
560mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
930pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
UB8DT-E3/4W
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias6.352
200V
8A
1.02V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
UB8CT-E3/4W
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias2.960
150V
8A
1.02V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 150V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
U8DT-E3/4W
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias3.472
200V
8A
1.02V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
U8CT-E3/4W
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias4.048
150V
8A
1.02V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 150V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
U8BT-E3/4W
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias5.168
100V
8A
1.02V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
VBT1045BP-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: 200°C (Max)
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias6.960
45V
10A (DC)
680mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
200°C (Max)
AR4PG-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 2A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 77pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-277, 3-PowerDFN
En existencias4.640
400V
2A (DC)
1.6V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
10µA @ 400V
77pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AR4PJ-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 77pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-277, 3-PowerDFN
En existencias5.936
600V
2A (DC)
1.6V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
10µA @ 600V
77pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
VBT5200-E3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 200V TO-263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias2.112
200V
5A
1.6V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
VS-8EWH02FNTRR-M3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 24ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias6.352
200V
8A
970mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
24ns
5µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
VS-8EWH02FNTR-M3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 24ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias6.736
200V
8A
970mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
24ns
5µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
VS-8EWH02FNTRL-M3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 24ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias4.064
200V
8A
970mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
24ns
5µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
SF5400-TR
Vishay Semiconductor Diodes Division

DIODE AVAL 3A 50V SOD-64

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: SOD-64, Axial
En existencias3.216
50V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
SF5400-TAP
Vishay Semiconductor Diodes Division

DIODE AVAL 3A 50V SOD-64

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: SOD-64, Axial
En existencias5.216
50V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYW84-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: SOD-64, Axial
En existencias4.896
600V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
7.5µs
1µA @ 600V
60pF @ 4V, 1MHz
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYW74TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: SOD-64, Axial
En existencias7.776
400V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 400V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYT56K-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: SOD-64, Axial
En existencias3.936
800V
3A
1.4V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
5µA @ 800V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYM36E-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.5A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.78V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: SOD-64, Axial
En existencias6.192
1000V
1.5A
1.78V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 1000V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BY228-15TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1.2KV 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: 140°C (Max)
Paquete: SOD-64, Axial
En existencias3.472
1200V
3A
1.5V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20µs
5µA @ 1200V
-
Through Hole
SOD-64, Axial
SOD-64
140°C (Max)
BYW84-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: SOD-64, Axial
En existencias5.248
600V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
7.5µs
1µA @ 600V
60pF @ 4V, 1MHz
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYW74TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: SOD-64, Axial
En existencias3.344
400V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 400V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYT56K-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: SOD-64, Axial
En existencias7.792
800V
3A
1.4V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
5µA @ 800V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYM36E-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 2.9A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 2.9A
  • Voltage - Forward (Vf) (Max) @ If: 1.78V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: SOD-64, Axial
En existencias4.192
1000V
2.9A
1.78V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 1000V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
hot BY228TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1.5KV 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: 140°C (Max)
Paquete: SOD-64, Axial
En existencias6.880
1500V
3A
1.5V @ 5A
Standard Recovery >500ns, > 200mA (Io)
20µs
5µA @ 1500V
-
Through Hole
SOD-64, Axial
SOD-64
140°C (Max)
BY228-15TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1.2KV 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: 140°C (Max)
Paquete: SOD-64, Axial
En existencias2.448
1200V
3A
1.5V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20µs
5µA @ 1200V
-
Through Hole
SOD-64, Axial
SOD-64
140°C (Max)
AU3PJ-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-277, 3-PowerDFN
En existencias7.376
600V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PG-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-277, 3-PowerDFN
En existencias6.784
400V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C