Página 10 - Toshiba Semiconductor and Storage Productos - Transistores - Bipolar (BJT) - Simple

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC4604,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias5.040	3A	50V	500mV @ 75mA, 1.5A	100nA (ICBO)	120 @ 100mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC4604,F(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias2.480	3A	50V	500mV @ 75mA, 1.5A	100nA (ICBO)	120 @ 100mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC3672-O(T2ASH,FM	Toshiba Semiconductor and Storage	TRANS NPN 100MA 300V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 1W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias2.176	100mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	30 @ 20mA, 10V	1W	80MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3669-Y,T2PASF(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 80V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias4.448	2A	80V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3669-Y(T2OMI,FM	Toshiba Semiconductor and Storage	TRANS NPN 2A 80V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias2.256	2A	80V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3668-Y,T2WNLF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias3.232	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3668-Y,T2F(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias4.288	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3668-Y,T2F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias4.576	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3668-Y,F2PANF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias5.728	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3668-O,T2CLAF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias6.816	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3665-Y,T2YNSF(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias7.664	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	1W	120MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3665-Y,T2NSF(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias7.712	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	1W	120MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3665-Y,T2F(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias6.528	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	1W	120MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3665-Y(T2NSW,FM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Paquete: SC-71	En existencias3.344	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	1W	120MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SC3328-Y,T6CKF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 80V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	Paquete: TO-226-3, TO-92-3 Long Body	En existencias3.088	2A	80V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SC3328-Y,HOF(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 80V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	Paquete: TO-226-3, TO-92-3 Long Body	En existencias6.896	2A	80V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SC3328-O,T6KEHF(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 80V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	Paquete: TO-226-3, TO-92-3 Long Body	En existencias3.376	2A	80V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
2SC3225,T6ALPSF(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 40V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 400mA, 1V Power - Max: 900mW Frequency - Transition: 220MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias3.072	2A	40V	500mV @ 1mA, 300mA	10µA (ICBO)	500 @ 400mA, 1V	900mW	220MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y,WNLF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias2.320	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y,T6WNLF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias2.016	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y,T6SWFF(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias3.360	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y,T6KEHF(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias4.864	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias6.256	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y,T6APNF(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias4.544	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y,F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias6.080	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias6.368	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y(T6TOJ,FM	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias2.160	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y(T6STL,FM	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias2.528	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y(T6OMI,FM	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias4.656	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y(T6ND3,AF	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paquete: TO-226-3, TO-92-3 Long Body	En existencias5.600	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD

2SC4604,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 3A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias5.040

3A

50V

500mV @ 75mA, 1.5A

100nA (ICBO)

120 @ 100mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC4604,F(J

Toshiba Semiconductor and Storage

TRANS NPN 3A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias2.480

3A

50V

500mV @ 75mA, 1.5A

100nA (ICBO)

120 @ 100mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC3672-O(T2ASH,FM

Toshiba Semiconductor and Storage

TRANS NPN 100MA 300V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Power - Max: 1W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias2.176

100mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

30 @ 20mA, 10V

1W

80MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3669-Y,T2PASF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 80V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias4.448

2A

80V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3669-Y(T2OMI,FM

Toshiba Semiconductor and Storage

TRANS NPN 2A 80V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias2.256

2A

80V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3668-Y,T2WNLF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias3.232

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3668-Y,T2F(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias4.288

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3668-Y,T2F(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias4.576

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3668-Y,F2PANF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias5.728

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3668-O,T2CLAF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias6.816

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3665-Y,T2YNSF(J

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias7.664

800mA

120V

1V @ 50mA, 500mA

100nA (ICBO)

80 @ 100mA, 5V

1W

120MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3665-Y,T2NSF(J

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias7.712

800mA

120V

1V @ 50mA, 500mA

100nA (ICBO)

80 @ 100mA, 5V

1W

120MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3665-Y,T2F(J

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias6.528

800mA

120V

1V @ 50mA, 500mA

100nA (ICBO)

80 @ 100mA, 5V

1W

120MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3665-Y(T2NSW,FM

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

Paquete: SC-71

En existencias3.344

800mA

120V

1V @ 50mA, 500mA

100nA (ICBO)

80 @ 100mA, 5V

1W

120MHz

150°C (TJ)

Through Hole

SC-71

MSTM

2SC3328-Y,T6CKF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 80V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

Paquete: TO-226-3, TO-92-3 Long Body

En existencias3.088

2A

80V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

LSTM

2SC3328-Y,HOF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 80V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

Paquete: TO-226-3, TO-92-3 Long Body

En existencias6.896

2A

80V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

LSTM

2SC3328-O,T6KEHF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 80V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

Paquete: TO-226-3, TO-92-3 Long Body

En existencias3.376

2A

80V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

LSTM

2SC3225,T6ALPSF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 40V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 400mA, 1V
Power - Max: 900mW
Frequency - Transition: 220MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias3.072

2A

40V

500mV @ 1mA, 300mA

10µA (ICBO)

500 @ 400mA, 1V

900mW

220MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y,WNLF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias2.320

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y,T6WNLF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias2.016

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y,T6SWFF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias3.360

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y,T6KEHF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias4.864

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias6.256

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y,T6APNF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias4.544

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y,F(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias6.080

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y(TE6,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias6.368

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y(T6TOJ,FM

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias2.160

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y(T6STL,FM

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias2.528

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y(T6OMI,FM

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias4.656

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SC2655-Y(T6ND3,AF

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

En existencias5.600

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD