Página 5 - Toshiba Semiconductor and Storage Productos - Transistores - Bipolar (BJT) - Simple, prepolarizados | Heisener Electronics
Contáctenos
SalesDept@heisener.com 86-755-83210559-827
Iniciar sesión/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carro 0

Toshiba Semiconductor and Storage Productos - Transistores - Bipolar (BJT) - Simple, prepolarizados

Registros 172
Página  5/6
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
RN2101CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias3.520
50mA
20V
4.7k
4.7k
30 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1110(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paquete: SC-75, SOT-416
En existencias7.952
100mA
50V
4.7k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
100mW
Surface Mount
SC-75, SOT-416
SSM
RN1111ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias4.400
80mA
50V
10k
-
120 @ 1mA, 5V
150mV @ 250µA, 5mA
100nA (ICBO)
-
100mW
Surface Mount
SC-101, SOT-883
CST3
RN1109ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias2.496
80mA
50V
47k
22k
70 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
RN1108ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias4.960
80mA
50V
22k
47k
80 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
RN1106ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias2.656
80mA
50V
4.7k
47k
80 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
RN1105ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias4.336
80mA
50V
2.2k
47k
80 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
RN1104ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias4.544
80mA
50V
47k
47k
80 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
RN1103ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias5.840
80mA
50V
22k
22k
70 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
RN1102ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias7.472
80mA
50V
10k
10k
50 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias4.624
80mA
50V
4.7k
4.7k
30 @ 10mA, 5V
150mV @ 500µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
RN1113CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias3.504
50mA
20V
47k
-
300 @ 1mA, 5V
150mV @ 250µA, 5mA
100nA (ICBO)
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1112CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias5.280
50mA
20V
22k
-
300 @ 1mA, 5V
150mV @ 250µA, 5mA
100nA (ICBO)
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1111CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias4.464
50mA
20V
10k
-
300 @ 1mA, 5V
150mV @ 250µA, 5mA
100nA (ICBO)
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1110CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias3.488
50mA
20V
4.7k
-
300 @ 1mA, 5V
150mV @ 250µA, 5mA
100nA (ICBO)
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1109CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias4.640
50mA
20V
47k
22k
100 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1108CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias3.744
50mA
20V
22k
47k
120 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1107CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias6.496
50mA
20V
10k
47k
120 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1106CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias7.456
50mA
20V
4.7k
47k
120 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1105CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias2.736
50mA
20V
2.2k
47k
120 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1104CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias5.232
50mA
20V
47k
47k
120 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1103CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias2.624
50mA
20V
22k
22k
100 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1102CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias4.576
50mA
20V
10k
10k
60 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
hot RN1101CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
Paquete: SC-101, SOT-883
En existencias720.000
50mA
20V
4.7k
4.7k
30 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
50mW
Surface Mount
SC-101, SOT-883
CST3
RN1118(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paquete: SC-75, SOT-416
En existencias2.336
100mA
50V
47k
10k
50 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
100mW
Surface Mount
SC-75, SOT-416
SSM
RN1117(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paquete: SC-75, SOT-416
En existencias6.976
100mA
50V
10k
4.7k
30 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
100mW
Surface Mount
SC-75, SOT-416
SSM
RN1112(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paquete: SC-75, SOT-416
En existencias6.352
100mA
50V
22k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
100mW
Surface Mount
SC-75, SOT-416
SSM
RN1109(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paquete: SC-75, SOT-416
En existencias7.280
100mA
50V
47k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
100mW
Surface Mount
SC-75, SOT-416
SSM
hot RN1106MFV(TL3,T)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Paquete: SOT-723
En existencias1.824.000
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 500µA, 5mA
500nA
-
150mW
Surface Mount
SOT-723
VESM
RN1444ATE85LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 30MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias2.800
300mA
20V
2.2k
-
200 @ 4mA, 2V
100mV @ 3mA, 30mA
100nA (ICBO)
30MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini