Página 7 - NXP Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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NXP Productos - Transistores - FET, MOSFET - Simple

Registros 468
Página  7/16
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PHX18NQ11T,127
NXP

MOSFET N-CH 110V 12.5A SOT186A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 110V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 31.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
Paquete: TO-220-3 Full Pack, Isolated Tab
En existencias4.224
MOSFET (Metal Oxide)
110V
12.5A (Tc)
10V
4V @ 1mA
21nC @ 10V
635pF @ 25V
±20V
-
31.2W (Tc)
90 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
PHW80NQ10T,127
NXP

MOSFET N-CH 100V 80A SOT429

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4720pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 263W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias7.360
MOSFET (Metal Oxide)
100V
80A (Tc)
10V
4V @ 1mA
109nC @ 10V
4720pF @ 25V
±20V
-
263W (Tc)
15 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
PHU78NQ03LT,127
NXP

MOSFET N-CH 25V 75A SOT533

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias2.432
MOSFET (Metal Oxide)
25V
75A (Tc)
5V, 10V
2V @ 1mA
11nC @ 4.5V
970pF @ 12V
±20V
-
107W (Tc)
9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
PHU66NQ03LT,127
NXP

MOSFET N-CH 25V 66A SPT533

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias6.416
MOSFET (Metal Oxide)
25V
66A (Tc)
5V, 10V
2V @ 1mA
12nC @ 5V
860pF @ 25V
±20V
-
93W (Tc)
10.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
PHU11NQ10T,127
NXP

MOSFET N-CH 100V 10.9A SOT533

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias4.448
MOSFET (Metal Oxide)
100V
10.9A (Tc)
10V
4V @ 1mA
14.7nC @ 10V
360pF @ 25V
±20V
-
57.7W (Tc)
180 mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
PHU108NQ03LT,127
NXP

MOSFET N-CH 25V 75A SOT533

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias2.192
MOSFET (Metal Oxide)
25V
75A (Tc)
5V, 10V
2V @ 1mA
16.3nC @ 4.5V
1375pF @ 12V
±20V
-
187W (Tc)
6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
PHU101NQ03LT,127
NXP

MOSFET N-CH 30V 75A SOT533

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias6.752
MOSFET (Metal Oxide)
30V
75A (Tc)
5V, 10V
2.5V @ 1mA
23nC @ 5V
2180pF @ 25V
±20V
-
166W (Tc)
5.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
PHT2NQ10T,135
NXP

MOSFET N-CH 100V 2.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 430 mOhm @ 1.75A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paquete: TO-261-4, TO-261AA
En existencias2.992
MOSFET (Metal Oxide)
100V
2.5A (Tc)
10V
4V @ 1mA
5.1nC @ 10V
160pF @ 25V
±20V
-
6.25W (Tc)
430 mOhm @ 1.75A, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
PHP83N03LT,127
NXP

MOSFET N-CH 25V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias7.376
MOSFET (Metal Oxide)
25V
75A (Tc)
5V, 10V
2V @ 1mA
33nC @ 5V
1660pF @ 25V
±15V
-
115W (Tc)
9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP78NQ03LT,127
NXP

MOSFET N-CH 25V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1074pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.904
MOSFET (Metal Oxide)
25V
75A (Tc)
5V, 10V
2V @ 1mA
13nC @ 5V
1074pF @ 25V
±20V
-
93W (Tc)
9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP75NQ08T,127
NXP

MOSFET N-CH 75V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1985pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 157W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.344
MOSFET (Metal Oxide)
75V
75A (Tc)
10V
4V @ 1mA
40nC @ 10V
1985pF @ 25V
±20V
-
157W (Tc)
13 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP73N06T,127
NXP

MOSFET N-CH 60V 73A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2464pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias4.432
MOSFET (Metal Oxide)
60V
73A (Tc)
10V
4V @ 1mA
54nC @ 10V
2464pF @ 25V
±20V
-
166W (Tc)
14 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP66NQ03LT,127
NXP

MOSFET N-CH 25V 66A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias2.544
MOSFET (Metal Oxide)
25V
66A (Tc)
5V, 10V
2V @ 1mA
12nC @ 5V
860pF @ 25V
±20V
-
93W (Tc)
10.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP52N06T,127
NXP

MOSFET N-CH 60V 52A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1592pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.312
MOSFET (Metal Oxide)
60V
52A (Tc)
10V
4V @ 1mA
36nC @ 10V
1592pF @ 25V
±20V
-
120W (Tc)
22 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP45NQ15T,127
NXP

MOSFET N-CH 150V 45.1A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 45.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias7.200
MOSFET (Metal Oxide)
150V
45.1A (Tc)
10V
4V @ 1mA
32nC @ 10V
1770pF @ 25V
±20V
-
230W (Tc)
42 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP34NQ11T,127
NXP

MOSFET N-CH 110V 35A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 110V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias5.232
MOSFET (Metal Oxide)
110V
35A (Tc)
10V
4V @ 1mA
40nC @ 10V
1700pF @ 25V
±20V
-
136W (Tc)
40 mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP32N06LT,127
NXP

MOSFET N-CH 60V 34A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 97W (Tc)
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.248
MOSFET (Metal Oxide)
60V
34A (Tc)
4.5V, 10V
2V @ 1mA
17nC @ 5V
1280pF @ 25V
±15V
-
97W (Tc)
37 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP3055E,127
NXP

MOSFET N-CH 60V 10.3A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias2.768
MOSFET (Metal Oxide)
60V
10.3A (Tc)
10V
4V @ 1mA
5.8nC @ 10V
250pF @ 25V
±20V
-
33W (Tc)
150 mOhm @ 5.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP225NQ04T,127
NXP

MOSFET N-CH 40V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.008
MOSFET (Metal Oxide)
40V
75A (Tc)
10V
4V @ 1mA
94nC @ 10V
5100pF @ 25V
±20V
-
300W (Tc)
3.1 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP222NQ04LT,127
NXP

MOSFET N-CH 40V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 93.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7880pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias2.640
MOSFET (Metal Oxide)
40V
75A (Tc)
4.5V, 10V
2V @ 1mA
93.6nC @ 5V
7880pF @ 25V
±15V
-
300W (Tc)
2.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP21N06LT,127
NXP

MOSFET N-CH 55V 19A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias5.456
MOSFET (Metal Oxide)
55V
19A (Tc)
5V, 10V
2V @ 1mA
9.4nC @ 5V
650pF @ 25V
±15V
-
56W (Tc)
70 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP193NQ06T,127
NXP

MOSFET N-CH 55V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5082pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.200
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 1mA
85.6nC @ 10V
5082pF @ 25V
±20V
-
300W (Tc)
4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP176NQ04T,127
NXP

MOSFET N-CH 40V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 68.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias2.400
MOSFET (Metal Oxide)
40V
75A (Tc)
10V
4V @ 1mA
68.9nC @ 10V
3620pF @ 25V
±20V
-
250W (Tc)
4.3 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP174NQ04LT,127
NXP

MOSFET N-CH 40V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5345pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias6.448
MOSFET (Metal Oxide)
40V
75A (Tc)
4.5V, 10V
2V @ 1mA
64nC @ 5V
5345pF @ 25V
±15V
-
250W (Tc)
4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP152NQ03LTA,127
NXP

MOSFET N-CH 25V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias7.072
MOSFET (Metal Oxide)
25V
75A (Tc)
5V, 10V
2V @ 1mA
36nC @ 5V
3140pF @ 25V
±20V
-
150W (Tc)
4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP14NQ20T,127
NXP

MOSFET N-CH 200V 14A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias7.136
MOSFET (Metal Oxide)
200V
14A (Tc)
10V
4V @ 1mA
38nC @ 10V
1500pF @ 25V
±20V
-
125W (Tc)
230 mOhm @ 7A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP143NQ04T,127
NXP

MOSFET N-CH 40V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias5.216
MOSFET (Metal Oxide)
40V
75A (Tc)
10V
4V @ 1mA
52nC @ 10V
2840pF @ 25V
±20V
-
200W (Tc)
5.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP129NQ04LT,127
NXP

MOSFET N-CH 40V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias6.896
MOSFET (Metal Oxide)
40V
75A (Tc)
4.5V, 10V
2V @ 1mA
44.2nC @ 5V
3965pF @ 25V
±15V
-
200W (Tc)
5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP119NQ06T,127
NXP

MOSFET N-CH 55V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.888
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 1mA
53nC @ 10V
2820pF @ 25V
±20V
-
200W (Tc)
7.1 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PHP112N06T,127
NXP

MOSFET N-CH 55V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4352pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias7.904
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 1mA
87nC @ 10V
4352pF @ 25V
±20V
-
200W (Tc)
8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3