NXP Productos - Transistores - FET, MOSFET - Simple

PMT760EN,135

NXP

MOSFET N-CH 100V SC-73

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 80V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 6.2W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 800mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

PMT29EN,115

NXP

MOSFET N-CH 30V 6A SC-73

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
• Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

PMT21EN,135

NXP

MOSFET N-CH 30V 7.4A SC-73

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

PMT200EN,135

NXP

MOSFET N-CH 100V 1.8A SC-73

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 80V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 8.3W (Tc)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

PMR670UPE,115

NXP

MOSFET P-CH 20V 480MA SC-75

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 400mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75
• Package / Case: SC-75, SOT-416

Paquete: SC-75, SOT-416

PMPB20UN,115

NXP

MOSFET N-CH 20V 6.6A 6DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-DFN2020MD (2x2)
• Package / Case: 6-UDFN Exposed Pad

Paquete: 6-UDFN Exposed Pad

PMN22XN,115

NXP

MOSFET N-CH 30V 5.7A SC-74

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 545mW (Ta), 6.25W (Tc)
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SC-74, SOT-457

Paquete: SC-74, SOT-457

PMN15UN,115

NXP

MOSFET N-CH 30V 8A SC-74

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SC-74, SOT-457

Paquete: SC-74, SOT-457

PMG45UN,115

NXP

MOSFET N-CH 20V 3A SOT363

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 375mW (Ta), 4.35W (Tc)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSSOP
• Package / Case: 6-TSSOP, SC-88, SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363

PMF87EN,115

NXP

MOSFET N-CH 30V 1.7A SOT323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 275mW (Ta)
• Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323-3
• Package / Case: SC-70, SOT-323

Paquete: SC-70, SOT-323

PMF77XN,115

NXP

MOSFET N-CH 30V 1.5A SOT323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 270mW (Ta), 1.92W (Tc)
• Rds On (Max) @ Id, Vgs: 97 mOhm @ 1.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323-3
• Package / Case: SC-70, SOT-323

Paquete: SC-70, SOT-323

PMF63UN,115

NXP

MOSFET N-CH 20V 1.8A SOT323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 275mW (Ta), 1.785W (Tc)
• Rds On (Max) @ Id, Vgs: 74 mOhm @ 1.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323-3
• Package / Case: SC-70, SOT-323

Paquete: SC-70, SOT-323

PMF250XN,115

NXP

MOSFET N-CH 30V 0.9A SOT323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 275mW (Ta), 1.065W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323-3
• Package / Case: SC-70, SOT-323

Paquete: SC-70, SOT-323

NX3020NAKT,115

NXP

MOSFET N-CH 30V 180MA SC-75

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230mW (Ta), 1.06W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75
• Package / Case: SC-75, SOT-416

Paquete: SC-75, SOT-416

NX3008PBKT,115

NXP

MOSFET P-CH 30V SC-75

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
• Rds On (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75
• Package / Case: SC-75, SOT-416

Paquete: SC-75, SOT-416

NX3008NBKT,115

NXP

MOSFET N-CH 30V SC-75

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75
• Package / Case: SC-75, SOT-416

Paquete: SC-75, SOT-416

BSS84AKT,115

NXP

MOSFET P-CH 50V SC-75

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75
• Package / Case: SC-75, SOT-416

Paquete: SC-75, SOT-416

PMPB16XN,115

NXP

MOSFET N-CH 30V 7.2A 6DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-DFN2020MD (2x2)
• Package / Case: 6-UDFN Exposed Pad

Paquete: 6-UDFN Exposed Pad

PMPB12UN,115

NXP

MOSFET N-CH 20V 7.9A 6DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-DFN2020MD (2x2)
• Package / Case: 6-UDFN Exposed Pad

Paquete: 6-UDFN Exposed Pad

PMN25UN,115

NXP

MOSFET N-CH 20V 6A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 530mW (Ta), 6.25W (Tc)
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SC-74, SOT-457

Paquete: SC-74, SOT-457

PMR290UNE,115

NXP

MOSFET N-CH 20V 700MA SC-75

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75
• Package / Case: SC-75, SOT-416

Paquete: SC-75, SOT-416

BUK962R1-40E,118

NXP

MOSFET N-CH 40V 120A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 13160pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 293W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BUK961R7-40E,118

NXP

MOSFET N-CH 40V 120A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 105.4nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 15010pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 324W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BUK951R8-40EQ

NXP

MOSFET N-CH 40V TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paquete: TO-220-3

PMT760EN,115

NXP

MOSFET N-CH 100V SC-73

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 80V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 6.2W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 800mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

PMT200EN,115

NXP

MOSFET N-CH 100V 1.8A SC-73

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 80V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 8.3W (Tc)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

BUK9C5R3-100EJ

NXP

MOSFET N-CH 100V D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Paquete: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

BUK9C3R8-80EJ

NXP

MOSFET N-CH 80V D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Paquete: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

BUK9C2R2-60EJ

NXP

MOSFET N-CH 60V D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Paquete: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

BUK7C5R4-100EJ

NXP

MOSFET N-CH 100V 147A D2PAK-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Paquete: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB