Infineon Technologies Productos

IRG4PSH71UDPBF

Infineon Technologies

IGBT 1200V 99A 350W SUPER247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 99A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
• Power - Max: 350W
• Switching Energy: 8.8mJ (on), 9.4mJ (off)
• Input Type: Standard
• Gate Charge: 380nC
• Td (on/off) @ 25°C: 46ns/250ns
• Test Condition: 960V, 70A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 110ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-274AA
• Supplier Device Package: SUPER-247 (TO-274AA)

Paquete: TO-274AA

IPI100N06S3L-03

Infineon Technologies

MOSFET N-CH 55V 100A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 230µA
• Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IRL3716S

Infineon Technologies

MOSFET N-CH 20V 180A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 210W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLS3813PBF

Infineon Technologies

MOSFET N-CH 30V 160A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.35V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 83nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 8020pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 195W (Tc)
• Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 148A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPI65R600C6XKSA1

Infineon Technologies

MOSFET N-CH 650V 7.3A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 210µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

PTRA094252FCV1R2XTMA1

Infineon Technologies

IC RF LDMOS FET H-37248-4

• Transistor Type: LDMOS (Dual), Common Source
• Frequency: 746MHz ~ 960MHz
• Gain: 23dB
• Voltage - Test: -
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: -
• Power - Output: 351.5W
• Voltage - Rated: 105V
• Package / Case: H-37248-4
• Supplier Device Package: H-37248-4

Paquete: H-37248-4

BSL215CL6327HTSA1

Infineon Technologies

MOSFET N/P-CH 20V 1.5A TSOP-6

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.5A
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
• Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
• Power - Max: 500mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: PG-TSOP6-6

Paquete: SOT-23-6 Thin, TSOT-23-6

IRU431LCL5TR

Infineon Technologies

IC VREF SHUNT ADJ SOT23-5

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 1.24V
• Voltage - Output (Max): 15V
• Current - Output: 10mA
• Tolerance: ±1%
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 80µA
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

Paquete: SC-74A, SOT-753

AUIPS1031S

Infineon Technologies

IC SW IPS 1CH LOW SIDE D2PAK

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 36V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.3A
• Rds On (Typ): 40 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BTS50101EKBXUMA1

Infineon Technologies

IC SWITCH PWR HISIDE DSO-14

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 10A
• Rds On (Typ): 10 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-14-47-EP

Paquete: 14-SOIC (0.154", 3.90mm Width) Exposed Pad

BTS5210LAUMA1

Infineon Technologies

IC HIGH SIDE PWR SWITCH PDSO-12

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 40 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.8A
• Rds On (Typ): 110 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-12-9

Paquete: 12-BSOP (0.295", 7.50mm Width) Exposed Pad

TDK5110XUMA1

Infineon Technologies

IC TRANSMITTER ASK/FSK 16-TSSOP

• Frequency: 433 ~ 435MHz; 866 ~ 870MHz
• Applications: Remote Control, RKE, Security Systems
• Modulation or Protocol: ASK, FSK
• Data Rate (Max): 20 kbps
• Power - Output: 11dBm
• Current - Transmitting: 15.7mA
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Memory Size: -
• Features: -
• Voltage - Supply: 2.1 V ~ 4 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)

Paquete: 16-TSSOP (0.173", 4.40mm Width)

BGS18GA14E6327XTSA1

Infineon Technologies

RF SWITCH

• Frequency - Lower: 100MHz
• Frequency - Upper: 3.8GHz
• Isolation @ Frequency: 33dB @ 3.5GHz (typ)
• Insertion Loss @ Frequency: 0.7dB @ 3.5GHz
• IIP3: -
• Topology: -
• Circuit: SP8T
• P1dB: -
• Features: -
• Impedance: 50 Ohm
• Operating Temperature: -30°C ~ 85°C
• Voltage - Supply: 3V
• RF Type: -
• Package / Case: 14-UFQFN Exposed Pad
• Supplier Device Package: ATSLP-14-4

Paquete: 14-UFQFN Exposed Pad

TLE92633BQXXUMA1

Infineon Technologies

IC SBC 48VQFN

• Applications: Automotive
• Interface: SPI
• Voltage - Supply: 28V
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31
• Mounting Type: Surface Mount

Paquete: 48-VFQFN Exposed Pad

TC212L8F133NACKXUMA1

Infineon Technologies

IC MCU 32BIT 512KB FLASH 80TQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

FD1000R33HE3KBPSA1

Infineon Technologies

IGBT MODULE 3300V 1000A

• IGBT Type: Trench Field Stop
• Configuration: Dual Brake Chopper
• Voltage - Collector Emitter Breakdown (Max): 3300 V
• Current - Collector (Ic) (Max): 1000 A
• Power - Max: 11500 W
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1000A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: -

FS50R12KT4B11BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Power - Max: 280 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

Paquete: -

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XMC7200D-E272K8384AA

Infineon Technologies

IC MCU 32BIT 8.188MB FLSH 272BGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 350MHz
• Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 191
• Program Memory Size: 8.188MB (8.188M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256K x 8
• RAM Size: 1M x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 96x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 272-LFBGA
• Supplier Device Package: 272-BGA (16x16)

Paquete: -

CY9AF155MBBGL-GK9E1

Infineon Technologies

IC MCU 32BIT 416KB FLASH 96FBGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 66
• Program Memory Size: 416KB (416K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 48K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 17x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 96-LFBGA
• Supplier Device Package: 96-FBGA (6x6)

Paquete: -

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CY27410LTXI-007T

Infineon Technologies

IC SS CLOCK GENERATOR 48QFN

• Type: Spread Spectrum Clock Generator
• PLL: Yes with Bypass
• Input: LVCMOS, Crystal
• Output: CML, HCSL, LVCMOS, LVDS, LVPECL
• Number of Circuits: 1
• Ratio - Input:Output: 3:12
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 250MHz, 700MHz
• Divider/Multiplier: Yes/No
• Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

Paquete: -

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D770N14TXPSA1

Infineon Technologies

DIODE GEN PURP 1.4KV 770A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400 V
• Current - Average Rectified (Io): 770A
• Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 400 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 mA @ 1400 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

Paquete: -

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BAR6406WE6327

Infineon Technologies

RF PIN DIODE > ANTENNA SWITCH

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 150V
• Current - Max: 100 mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
• Power Dissipation (Max): 250 mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

Paquete: -

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TD700N22KOFTIMHPSA1

Infineon Technologies

THYR / DIODE MODULE DK BG-PB60AT

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 700 A
• Current - On State (It (RMS)) (Max): 1050 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: 135°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

Paquete: -

CY8C4147AZS-S285T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, TRNG, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

Paquete: -

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FP20R06W1E3BOMA1

Infineon Technologies

IGBT MODULE 600V 27A 94W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 27 A
• Power - Max: 94 W
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: -

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D2601NH90TXPSA1

Infineon Technologies

DIODE GEN PURP 9KV 1790A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 9000 V
• Current - Average Rectified (Io): 1790A
• Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE
• Supplier Device Package: -
• Operating Temperature - Junction: 0°C ~ 140°C

Paquete: -

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CY8C4126LQA-S453T

Infineon Technologies

IC MCU 32BIT 64KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

Paquete: -

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IS26KL512S-DABLA100-TR

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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IDWD75E120D7XKSA1

Infineon Technologies

INDUSTRY 14

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

XMC7100-F100K4160AA

Infineon Technologies

IC MCU 32BT 4.063MB FLSH 100QFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
• Core Size: 32-Bit Single-Core
• Speed: 100MHz, 250MHz
• Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 72
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256K x 8
• RAM Size: 768K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 37x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: 100-TEQFP (14x14)

Paquete: -