Infineon Technologies Productos

IRG4BC30KD-STRR

Infineon Technologies

IGBT 600V 28A 100W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): 58A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
• Power - Max: 100W
• Switching Energy: 600µJ (on), 580µJ (off)
• Input Type: Standard
• Gate Charge: 67nC
• Td (on/off) @ 25°C: 60ns/160ns
• Test Condition: 480V, 16A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4BC10SD-SPBF

Infineon Technologies

IGBT 600V 14A 38W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
• Power - Max: 38W
• Switching Energy: 310µJ (on), 3.28mJ (off)
• Input Type: Standard
• Gate Charge: 15nC
• Td (on/off) @ 25°C: 76ns/815ns
• Test Condition: 480V, 8A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FS400R12A2T4BOSA1

Infineon Technologies

IGBT MODULES

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

IPP80N04S3-04

Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

Paquete: TO-220-3

BSS138W L6433

Infineon Technologies

MOSFET N-CH 60V 280MA SOT-323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.4V @ 26µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT323-3
• Package / Case: SC-70, SOT-323

Paquete: SC-70, SOT-323

BSC027N03S G

Infineon Technologies

MOSFET N-CH 30V 100A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

Paquete: 8-PowerTDFN

IRFR3706TRL

Infineon Technologies

MOSFET N-CH 20V 75A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 88W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRL1004STRL

Infineon Technologies

MOSFET N-CH 40V 130A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP120P04P404AKSA1

Infineon Technologies

MOSFET N-CH TO220-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 340µA
• Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14790pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

Paquete: TO-220-3

AUIRFR3504TRL

Infineon Technologies

MOSFET N-CH 40V 87A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-PAK (TO-252AA)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

BSZ0503NSIATMA1

Infineon Technologies

MOSFET N-CH 30V 20A 8SON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8-FL
• Package / Case: 8-PowerTDFN

Paquete: 8-PowerTDFN

IPT012N08N5ATMA1

Infineon Technologies

MOSFET N-CH 80V 300A 8HSOF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 280µA
• Gate Charge (Qg) (Max) @ Vgs: 223nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 150A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8-1
• Package / Case: 8-PowerSFN

Paquete: 8-PowerSFN

AUIRF4905STRL

Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPD060N03LGATMA1

Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 56W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFZ44NSTRLPBF

Infineon Technologies

MOSFET N-CH 55V 49A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
• Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PTVA093002TCV1R250XUMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

IPG20N06S4L14ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 20A
• Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
• Power - Max: 50W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

Paquete: 8-PowerVDFN

BC 846A E6327

Infineon Technologies

TRANS NPN 65V 0.1A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 65V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

Paquete: TO-236-3, SC-59, SOT-23-3

BCR119SE6327BTSA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

Paquete: 6-VSSOP, SC-88, SOT-363

SIDC14D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 15A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 15A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: Die

IRU1117-18CYTR

Infineon Technologies

IC REG LINEAR 1.8V 800MA SOT223

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 1A
• Current - Output: 800mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

Paquete: TO-261-4, TO-261AA

IRU3038CS

Infineon Technologies

IC REG CTRLR BUCK/BOOST 14SOIC

• Output Type: Transistor Driver
• Function: Step-Up, Step-Down
• Output Configuration: Positive
• Topology: Buck, Boost
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V
• Frequency - Switching: 200kHz
• Duty Cycle (Max): 90%
• Synchronous Rectifier: Yes
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Frequency Control, Soft Start
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

Paquete: 14-SOIC (0.154", 3.90mm Width)

BTN7970BAUMA1

Infineon Technologies

IC MOTOR DRIVER PAR TO263-7

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 70A
• Voltage - Supply: 8 V ~ 18 V
• Voltage - Load: 8 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: PG-TO263-7

Paquete: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

XE164KN16F80LAAFXUMA1

Infineon Technologies

IC MCU 16BIT 128KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 18K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

Paquete: 100-LQFP Exposed Pad

SAK-XC2236N-24F40L

Infineon Technologies

IC MCU 16BIT 192KB FLASH 64LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 40MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 192KB (192K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 26K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-6

Paquete: 64-LQFP Exposed Pad

V23826-H18-C363

Infineon Technologies

TXRX SINGLE MODE 622MBD 1X9

• Data Rate: 622Mbps
• Wavelength: 1300nm
• Applications: Ethernet
• Voltage - Supply: 3.1 V ~ 3.5 V
• Connector Type: SC
• Mounting Type: Through Hole

Paquete: -

BTM7750GXUMA1

Infineon Technologies

IC BRIDGE DRIVER PAR 28DSO

• Output Configuration: Half Bridge (2)
• Applications: DC Motors, General Purpose
• Interface: Logic
• Load Type: Inductive
• Technology: DMOS
• Rds On (Typ): 45 mOhm LS, 70 mOhm HS
• Current - Output / Channel: -
• Current - Peak Output: 12A
• Voltage - Supply: 1.8 V ~ 42 V
• Voltage - Load: 1.8 V ~ 42 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Status Flag
• Fault Protection: Over Temperature, Short Circuit, UVLO
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-28

Paquete: 28-SOIC (0.295", 7.50mm Width)

C167CSLMCAKXQLA2

Infineon Technologies

IC MCU 16BIT ROMLESS 144MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

TLE9272QXXUMA1

Infineon Technologies

BODY SYSTEM ICS

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

IM231L6T2BAKMA1

Infineon Technologies

CIPOS MICRO

• Motor Type - Stepper: Multiphase
• Motor Type - AC, DC: -
• Function: Driver
• Output Configuration: Half Bridge (3)
• Interface: -
• Technology: IGBT
• Step Resolution: -
• Applications: Fan Motor Driver
• Current - Output: 6A
• Voltage - Supply: 13.5V ~ 16.5V
• Voltage - Load: 450V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 23-DIP Module (0.573", 14.55mm)
• Supplier Device Package: 23-DIP

Paquete: 23-DIP Module (0.573", 14.55mm)