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Infineon Technologies |
IGBT 650V 75A CO-PACK TO-247-4
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 90A
- Current - Collector Pulsed (Icm): 300A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 395W
- Switching Energy: 880µJ (on), 520µJ (off)
- Input Type: Standard
- Gate Charge: 166nC
- Td (on/off) @ 25°C: 52ns/412ns
- Test Condition: 400V, 37.5A, 27 Ohm, 15V
- Reverse Recovery Time (trr): 59ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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Paquete: TO-247-4 |
En existencias8.292 |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 470µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Paquete: TO-220-3 Full Pack |
En existencias7.904 |
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Infineon Technologies |
MOSFET N-CH 30V 23A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4110pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 23A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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Paquete: DirectFET? Isometric MX |
En existencias5.824 |
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Infineon Technologies |
MOSFET N-CH 55V 77A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Paquete: TO-220-3 |
En existencias7.728 |
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Infineon Technologies |
MOSFET P-CH 30V 8A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias38.100 |
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Infineon Technologies |
MOSFET N-CH 150V 43A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias3.264 |
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Infineon Technologies |
MOSFET N-CH 30V 10.8A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1801pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias533.796 |
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Infineon Technologies |
MOSFET P-CH 55V 9.5A TO-220FP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 5.4A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB Full-Pak
- Package / Case: TO-220-3 Full Pack
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Paquete: TO-220-3 Full Pack |
En existencias3.696 |
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Infineon Technologies |
MOSFET N-CH 30V 38A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA |
En existencias3.408 |
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Infineon Technologies |
MOSFET N-CH 40V 162A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias28.800 |
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Infineon Technologies |
MOSFET N-CH 60V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias6.304 |
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Infineon Technologies |
MOSFET N-CH 60V 257A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Paquete: TO-247-3 |
En existencias17.772 |
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Infineon Technologies |
MOSFET P-CH 250V 0.43A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Paquete: TO-261-4, TO-261AA |
En existencias48.744 |
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Infineon Technologies |
IC FET RF LDMOS
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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Paquete: - |
En existencias5.440 |
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Infineon Technologies |
TRANS PNP 45V 0.1A SOT-323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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Paquete: SC-70, SOT-323 |
En existencias2.048 |
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Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Paquete: - |
En existencias6.352 |
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Infineon Technologies |
IC GATE DRIVER 200V 8SOIC
- Applications: Secondary-Side Controller
- Voltage - Input: 200V
- Voltage - Supply: 11 V ~ 18 V
- Current - Supply: 45mA
- Operating Temperature: -25°C ~ 125°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paquete: - |
En existencias5.088 |
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Infineon Technologies |
IC SWITCH HISIDE SMART TO220-7
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 34 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 4A
- Rds On (Typ): 27 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart, Status Flag
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -30°C ~ 85°C (TA)
- Package / Case: TO-220-7 (Formed Leads)
- Supplier Device Package: PG-TO220-7
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Paquete: TO-220-7 (Formed Leads) |
En existencias6.016 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH TO220-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.5 V ~ 42 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 17A
- Rds On (Typ): 15 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart, Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-220-5 Formed Leads
- Supplier Device Package: P-TO220-5
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Paquete: TO-220-5 Formed Leads |
En existencias5.424 |
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Infineon Technologies |
IC BUCK SYNC DRIVER DL TDSON10-2
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 6 V
- Logic Voltage - VIL, VIH: 1.3V, 1.9V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 30V
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -25°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: TDSON-10-2
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Paquete: 10-VFDFN Exposed Pad |
En existencias3.568 |
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Infineon Technologies |
IC DRIVER 3-PHASE BRIDGE 44-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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Paquete: 44-LCC (J-Lead), 32 Leads |
En existencias297.192 |
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Infineon Technologies |
IC BRIDGE +1 GATE DVR 3PH 44PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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Paquete: 44-LCC (J-Lead), 32 Leads |
En existencias5.072 |
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Infineon Technologies |
IC SW TRILITHIC 115MOHM PDSO28
- Output Configuration: Half Bridge (2)
- Applications: DC Motors, General Purpose
- Interface: Logic
- Load Type: Inductive
- Technology: DMOS
- Rds On (Typ): 45 mOhm LS, 70 mOhm HS
- Current - Output / Channel: -
- Current - Peak Output: 12A
- Voltage - Supply: 1.8 V ~ 42 V
- Voltage - Load: 1.8 V ~ 42 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Status Flag
- Fault Protection: ESD, Over Temperature, Short Circuit, UVLO
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: P-DSO-28
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Paquete: 28-SOIC (0.295", 7.50mm Width) |
En existencias2.576 |
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Infineon Technologies |
IC CURRENT SENSE 600V 1MA 8-DIP
- Function: Current Sense
- Sensing Method: -
- Accuracy: -
- Voltage - Input: 9.5 V ~ 20 V
- Current - Output: 1mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Paquete: 8-DIP (0.300", 7.62mm) |
En existencias5.136 |
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Infineon Technologies |
IC MCU 16BIT 320KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: 320KB (320K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 110°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
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Paquete: 100-LQFP Exposed Pad |
En existencias2.864 |
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Infineon Technologies |
IC HALL SENSOR LINEAR TDSO-8
- Type: -
- Technology: -
- Axis: -
- Output Type: -
- Sensing Range: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Resolution: -
- Bandwidth: -
- Operating Temperature: -
- Features: -
- Package / Case: -
- Supplier Device Package: -
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Paquete: - |
En existencias6.984 |
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Infineon Technologies |
IC MMIC 119WFWLB
- Type: TxRx Only
- RF Family/Standard: Cellular
- Protocol: LTE, WiMAX
- Modulation: QPSK
- Frequency: 71GHz ~ 86GHz
- Data Rate (Max): -
- Power - Output: 12dBm
- Sensitivity: -
- Memory Size: -
- Serial Interfaces: SPI
- GPIO: 24
- Voltage - Supply: 12V
- Current - Receiving: -
- Current - Transmitting: -
- Operating Temperature: -
- Package / Case: 119-WFBGA
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Paquete: 119-WFBGA |
En existencias6.372 |
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Infineon Technologies |
XMC1000
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I²C, IrDA, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
- Number of I/O: 26
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 14x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: 28-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: PG-TSSOP-28-16
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Paquete: 28-TSSOP (0.173", 4.40mm Width) |
En existencias5.328 |
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Infineon Technologies |
IC MCU 16BIT 128TQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paquete: - |
En existencias6.912 |
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Infineon Technologies |
PROFET
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6V ~ 18V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 21A
- Rds On (Typ): 2.6mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-14-22
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Paquete: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad |
En existencias7.168 |
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