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Infineon Technologies |
IGBT 600V 6A 30W TO252-3
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 6A
- Current - Collector Pulsed (Icm): 12A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
- Power - Max: 30W
- Switching Energy: 64µJ
- Input Type: Standard
- Gate Charge: 14nC
- Td (on/off) @ 25°C: 20ns/259ns
- Test Condition: 400V, 2A, 118 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias4.608 |
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Infineon Technologies |
IGBT 600V 40A 166W TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
- Power - Max: 166W
- Switching Energy: 770µJ
- Input Type: Standard
- Gate Charge: 120nC
- Td (on/off) @ 25°C: 18ns/199ns
- Test Condition: 400V, 20A, 12 Ohm, 15V
- Reverse Recovery Time (trr): 41ns
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Paquete: TO-247-3 |
En existencias6.432 |
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Infineon Technologies |
MOSFET P-CH 60V 150MA SOT-323
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19.1pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323-3
- Package / Case: SC-70, SOT-323
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Paquete: SC-70, SOT-323 |
En existencias108.000 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA |
En existencias2.672 |
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Infineon Technologies |
MOSFET N-CH 20V 36A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA |
En existencias6.320 |
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Infineon Technologies |
MOSFET N-CH 300V 1.6A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 960mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias213.756 |
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Infineon Technologies |
MOSFET N-CH 75V 97A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Paquete: TO-220-3 |
En existencias3.344 |
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Infineon Technologies |
MOSFET N-CH 30V 105A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias6.032 |
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Infineon Technologies |
MOSFET N-CH 150V 900MA 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 540mA, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6?(TSOP-6)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias5.536 |
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Infineon Technologies |
MOSFET N-CH TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias4.912 |
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Infineon Technologies |
LOW POWER_LEGACY
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Paquete: - |
En existencias4.464 |
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Infineon Technologies |
MOSFET N-CH 800V 4A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 10.05nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 500V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 32W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Paquete: TO-251-3 Short Leads, IPak, TO-251AA |
En existencias9.516 |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-PowerVDFN
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Paquete: 8-PowerVDFN |
En existencias204.312 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 360µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 101W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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Paquete: TO-220-3 |
En existencias9.732 |
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Infineon Technologies |
MOSFET N-CH 40V 100A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6560pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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Paquete: 8-PowerTDFN |
En existencias5.920 |
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Infineon Technologies |
IC FET RF LDMOS 240W H-34288-2
- Transistor Type: LDMOS
- Frequency: 1.5GHz
- Gain: 16.5dB
- Voltage - Test: 30V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 2A
- Power - Output: 240W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-34288-2
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Paquete: 2-Flatpack, Fin Leads, Flanged |
En existencias7.536 |
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Infineon Technologies |
MOSFET 2P-CH 30V 1.5A 6TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 6.3µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias6.848 |
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Infineon Technologies |
TRANS PREBIAS NPN SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Paquete: TO-236-3, SC-59, SOT-23-3 |
En existencias4.208 |
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Infineon Technologies |
TRANS PNP 45V 3A SOT-223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Power - Max: 5W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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Paquete: TO-261-4, TO-261AA |
En existencias7.680 |
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Infineon Technologies |
TRANS PNP 45V 0.8A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Paquete: TO-236-3, SC-59, SOT-23-3 |
En existencias363.624 |
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Infineon Technologies |
IC SYSTEM BASIS CHIP DSO-36
- Type: -
- Applications: -
- Mounting Type: Surface Mount
- Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-36
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Paquete: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad |
En existencias6.480 |
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Infineon Technologies |
IC SWITCH HI-SIDE 4TERM D2-PAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 14A
- Rds On (Typ): 15 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Adjustable), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: D2Pak (SMD-220 5-Lead)
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Paquete: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
En existencias6.064 |
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Infineon Technologies |
IC SWITCH HI SIDE D2PAK
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 18A
- Rds On (Typ): 9 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Adjustable), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: D2Pak (SMD-220 5-Lead)
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Paquete: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
En existencias5.888 |
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Infineon Technologies |
IC MOTOR DRIVER ON/OFF TO263-7
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge
- Interface: On/Off
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 47A
- Voltage - Supply: 8 V ~ 18 V
- Voltage - Load: 8 V ~ 18 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
- Supplier Device Package: PG-TO263-7
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Paquete: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
En existencias23.628 |
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Infineon Technologies |
IC MCU 32BIT 200KB FLASH 64LQFP
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: CAN, I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
- Number of I/O: 48
- Program Memory Size: 200KB (200K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 12x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: PG-LQFP-64-26
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Paquete: - |
En existencias7.744 |
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Infineon Technologies |
MODULE TPM125 28TSSOP
- Applications: Embedded Security Trusted Computing
- Core Processor: 16-Bit
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: LPC
- Number of I/O: 1
- Voltage - Supply: 3 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paquete: - |
En existencias7.504 |
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Infineon Technologies |
TVS DIODE 5.5VWM 30VC TSLP2-2
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 5.5V (Max)
- Voltage - Breakdown (Min): 7.3V (Typ)
- Voltage - Clamping (Max) @ Ipp: 30V
- Current - Peak Pulse (10/1000µs): 2A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: RF Antenna
- Capacitance @ Frequency: 0.2pF @ 1MHz
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: TSLP-2-20
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Paquete: SOD-882 |
En existencias121.476 |
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Infineon Technologies |
MAGNETIC SWITCH LATCH SOT23-3
- Function: Latch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 7.5mT Trip, -7.5mT Release
- Test Condition: 25°C
- Voltage - Supply: 3 V ~ 26 V
- Current - Supply (Max): 2.5mA
- Current - Output (Max): 25mA
- Output Type: Open Drain
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: SOT-223-3
- Supplier Device Package: PG-SOT23-3-15
|
Paquete: SOT-223-3 |
En existencias8.748 |
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Infineon Technologies |
IC AMP MMIC 80MA 4.5V SOT343
- Frequency: 0Hz ~ 2.7GHz
- P1dB: 18dBm (63.1mW)
- Gain: 17.5dB
- Noise Figure: 2.5dB
- RF Type: Cellular, GSM, PCS, CDMA, UMTS
- Voltage - Supply: 4.5V
- Current - Supply: 80mA
- Test Frequency: 1GHz
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
|
Paquete: SC-82A, SOT-343 |
En existencias7.038 |
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Infineon Technologies |
IC TRANSCEIVER 1/1 TSON-8
- Type: Transceiver
- Protocol: LIN
- Number of Drivers/Receivers: 1/1
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: 20kbps
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-TDFN Exposed Pad
- Supplier Device Package: PG-TSON-8-1
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Paquete: 8-TDFN Exposed Pad |
En existencias6.176 |
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