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IXYS Productos

Registros 5.468
Página  92/183
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En existencias
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IXGP30N60B4D1
IXYS

IGBT 600V 56A 190W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 156A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 440µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias5.120
IXGH40N60A
IXYS

IGBT 600V 75A 250W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
  • Power - Max: 250W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 100ns/600ns
  • Test Condition: 480V, 40A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
Paquete: TO-247-3
En existencias2.400
IXGK120N60C2
IXYS

IGBT 600V 75A 830W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 500A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: 1.7mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 40ns/120ns
  • Test Condition: 400V, 80A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
Paquete: TO-264-3, TO-264AA
En existencias3.552
IXXH150N60C3
IXYS

IGBT 600V TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 300A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
  • Power - Max: 1360W
  • Switching Energy: 3.4mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 75A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
Paquete: TO-247-3
En existencias6.208
IXGP12N100
IXYS

IGBT 1000V 24A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 100ns/850ns
  • Test Condition: 800V, 12A, 120 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias6.336
IXFN130N30
IXYS

MOSFET N-CH 300V 130A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 130A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias4.368
IXFE48N50QD2
IXYS

MOSFET N-CH 500V 41A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 41A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias4.000
hot IXFK27N80Q
IXYS

MOSFET N-CH 800V 27A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
Paquete: TO-264-3, TO-264AA
En existencias40.956
IXFK360N10T
IXYS

MOSFET N-CH 100V 360A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 525nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 33000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
Paquete: TO-264-3, TO-264AA
En existencias2.800
IXFT16N80P
IXYS

MOSFET N-CH 800V 16A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
En existencias3.184
hot IXTP56N15T
IXYS

MOSFET N-CH 150V 56A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias60.492
IXFT60N50P3
IXYS

MOSFET N-CH 500V 60A TO268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
En existencias5.312
IXTK110N20L2
IXYS

MOSFET N-CH 200V 110A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
Paquete: TO-264-3, TO-264AA
En existencias7.728
IXTA08N50D2
IXYS

MOSFET N-CH 500V 800MA D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 Ohm @ 400mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias17.376
hot IXFK44N50P
IXYS

MOSFET N-CH 500V 44A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 658W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
Paquete: TO-264-3, TO-264AA
En existencias6.000
MCC700-22IO1W
IXYS

SCR THY PHASE LEG 2200V WC-500

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 2200V
  • Current - On State (It (AV)) (Max): 700A
  • Current - On State (It (RMS)) (Max): 1331A
  • Voltage - Gate Trigger (Vgt) (Max): -
  • Current - Gate Trigger (Igt) (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
  • Current - Hold (Ih) (Max): -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: WC-500
Paquete: WC-500
En existencias5.824
hot MCD162-08IO1
IXYS

MOD THYRISTOR/DIODE 800V Y4-M6

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 190A
  • Current - On State (It (RMS)) (Max): 300A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M6
Paquete: Y4-M6
En existencias5.056
DSI75-12B
IXYS

DIODE GEN PURP 1.2KV 110A DO203

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 180°C
Paquete: DO-203AB, DO-5, Stud
En existencias5.904
DSS16-0045AS-TUB
IXYS

DIODE SCHOTTKY 45V 16A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 670mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias5.584
DSB10I45PM
IXYS

DIODE SCHOTTKY 45V 10A TO220FP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 7mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-220-2 Full Pack
En existencias2.336
HTZ150C9K
IXYS

DIODE MODULE 9.6KV 3A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 9600V
  • Current - Average Rectified (Io) (per Diode): 3A
  • Voltage - Forward (Vf) (Max) @ If: 6V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 9600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: Module
En existencias2.624
MEA300-06DA
IXYS

DIODE MODULE 600V 304A Y4-M6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 304A
  • Voltage - Forward (Vf) (Max) @ If: 1.36V @ 260A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 12mA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M6
  • Supplier Device Package: Y4-M6
Paquete: Y4-M6
En existencias3.360
VBO50-16NO7
IXYS

DIODE BRIDGE 50A 1600V PWS-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-A
  • Supplier Device Package: PWS-A
Paquete: PWS-A
En existencias2.448
VBO50-12NO7
IXYS

DIODE BRIDGE 50A 1200V PWS-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-A
  • Supplier Device Package: PWS-A
Paquete: PWS-A
En existencias6.864
IXDI509SIAT/R
IXYS

IC GATE DRIVER SGL 9A 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias2.224
IX6R11S6
IXYS

IC BRIDGE DRIVER FOR N-CH MOSFET

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 35 V
  • Logic Voltage - VIL, VIH: 6V, 9.6V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC
Paquete: 18-SOIC (0.295", 7.50mm Width)
En existencias7.312
IXBOD1-18R
IXYS

IC DIODE MODULE BOD 1.25A 1800V

  • Voltage - Clamping: 1800V (1.8kV)
  • Technology: Mixed Technology
  • Number of Circuits: 2
  • Number of Circuits: 2
  • Applications: High Voltage
  • Mounting Type: PCB, Through Hole
  • Package / Case: Radial
  • Supplier Device Package: BOD
Paquete: Radial
En existencias5.058
CLA30MT1200NPZ-TRL
IXYS

TRIAC 1.2KV 33A TO263HV

  • Triac Type: Standard
  • Voltage - Off State: 1.2 kV
  • Current - On State (It (RMS)) (Max): 33 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.3 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
  • Current - Gate Trigger (Igt) (Max): 40 mA
  • Current - Hold (Ih) (Max): 50 mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
Paquete: -
En existencias4.380
DSS6-015AS-TRL
IXYS

DIODE SCHOTTKY 150V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
En existencias7.161
IXFY36N20X3
IXYS

MOSFET N-CH 200V 36A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paquete: -
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