Página 10 - Transistores - JFET | Productos semiconductores discretos | Heisener Electronics
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Transistores - JFET

Registros 635
Página  10/22
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot J175
Central Semiconductor Corp

JFET P-CHAN 30V TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 10V (VGS)
  • Resistance - RDS(On): 125 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias11.148
30V
-
7mA @ 15V
-
3V @ 10nA
5.5pF @ 10V (VGS)
125 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92
MV2N4393UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias2.656
-
-
-
-
-
-
-
-
-
-
-
-
2N5545JTX01
Vishay Siliconix

JFET N-CH 50V TO-71

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6
  • Supplier Device Package: TO-71
Paquete: TO-71-6
En existencias5.680
-
-
-
-
-
-
-
-
-
Through Hole
TO-71-6
TO-71
2N5114JTX02
Vishay Siliconix

JFET P-CH 30V TO-206AA

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
Paquete: TO-206AA, TO-18-3 Metal Can
En existencias6.720
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
hot 2N4392
Vishay Siliconix

MOSFET N-CH 40V .1NA TO-18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 1.8W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
Paquete: TO-206AA, TO-18-3 Metal Can
En existencias6.656
40V
-
25mA @ 20V
-
2V @ 1nA
14pF @ 20V
60 Ohm
1.8W
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
U1898_D27Z
Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias7.360
40V
-
15mA @ 20V
-
2V @ 1nA
16pF @ 20V
50 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PN4091_D26Z
Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias7.152
40V
-
30mA @ 20V
-
5V @ 1nA
16pF @ 20V
30 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot J110
ON Semiconductor

JFET N-CH 25V 0.31W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 18 Ohm
  • Power - Max: 310mW
  • Operating Temperature: 135°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias12.780
25V
-
10mA @ 15V
-
500mV @ 1µA
-
18 Ohm
310mW
135°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot J112G
ON Semiconductor

JFET N-CH 35V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias138.456
35V
-
5mA @ 15V
-
1V @ 1µA
-
50 Ohm
350mW
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
J107_D75Z
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 8 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias5.888
25V
-
100mA @ 15V
-
500mV @ 1µA
-
8 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
P1086
Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
  • Resistance - RDS(On): 75 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias3.632
30V
-
10mA @ 20V
-
10V @ 1µA
45pF @ 15V
75 Ohm
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot J176
Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 250 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias285.240
30V
-
2mA @ 15V
-
1V @ 10nA
-
250 Ohm
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
J113_D27Z
Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias6.288
35V
-
2mA @ 15V
-
500mV @ 1µA
-
100 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot FJX597JHTF
Fairchild/ON Semiconductor

JFET N-CH 20V 0.1W SOT323

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 20V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paquete: SC-70, SOT-323
En existencias36.000
20V
-
150µA @ 5V
1mA
600mV @ 1µA
3.5pF @ 5V
-
100mW
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
KSK30YBU
Fairchild/ON Semiconductor

JFET N-CH 50V 0.1W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 50V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias3.392
50V
-
1.2mA @ 10V
-
400mV @ 100nA
8.2pF @ 0V
-
100mW
125°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
KSK596BBU
Fairchild/ON Semiconductor

JFET N-CH 20V 0.1W TO-92S

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 20V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
Paquete: TO-226-3, TO-92-3 Short Body
En existencias2.800
20V
-
100µA @ 5V
1mA
600mV @ 1µA
3.5pF @ 5V
-
100mW
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
2N5638_D26Z
Fairchild/ON Semiconductor

JFET N-CH 30V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
  • Resistance - RDS(On): 30 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias6.144
30V
-
50mA @ 20V
-
-
10pF @ 12V (VGS)
30 Ohm
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N5459_D74Z
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias4.768
25V
-
4mA @ 15V
-
2V @ 10nA
7pF @ 15V
-
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N5458_D26Z
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias5.152
25V
-
2mA @ 15V
-
1V @ 10nA
7pF @ 15V
-
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PMBFJ174,215
NXP

JFET P-CH 30V 0.3W SOT23

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
  • Resistance - RDS(On): 85 Ohm
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23 (TO-236AB)
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias4.368
30V
30V
20mA @ 15V
-
5V @ 10nA
8pF @ 10V (VGS)
85 Ohm
300mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23 (TO-236AB)
J177,126
NXP

JFET P-CH 30V 400MW TO92-3

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
  • Resistance - RDS(On): 300 Ohm
  • Power - Max: 400mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias2.736
30V
30V
1.5mA @ 15V
-
800mV @ 10nA
8pF @ 10V (VGS)
300 Ohm
400mW
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92
2N4391UB
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias7.136
-
-
-
-
-
-
-
-
-
-
-
-
hot 2N4393
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias14.040
-
-
-
-
-
-
-
-
-
-
-
-
2SK3666-4-TB-E
ON Semiconductor

JFET N-CH 30V 0.2W CP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.5mA @ 10V
  • Current Drain (Id) - Max: 10mA
  • Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
  • Resistance - RDS(On): 200 Ohm
  • Power - Max: 200mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias4.736
30V
30V
2.5mA @ 10V
10mA
180mV @ 1µA
4pF @ 10V
200 Ohm
200mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
DSK9J01P0L
Panasonic Electronic Components

JFET N-CH 30MA 125MW SSMINI3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 55V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V
  • Current Drain (Id) - Max: 30mA
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 10µA
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 125mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
Paquete: SC-89, SOT-490
En existencias7.840
-
55V
1mA @ 10V
30mA
5V @ 10µA
6pF @ 10V
-
125mW
150°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F3-B
2SK2145-Y(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH JFET 50V SMV

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
Paquete: SC-74A, SOT-753
En existencias26.616
-
-
1.2mA @ 10V
-
200mV @ 100nA
13pF @ 10V
-
300mW
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
hot BSR58
Fairchild/ON Semiconductor

JFET N-CH 40V 0.25W SOT-23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800mV @ 0.5nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 250mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias15.012
40V
-
8mA @ 15V
-
800mV @ 0.5nA
-
60 Ohm
250mW
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot 2N5116
Central Semiconductor Corp

JFET P-CH 30V 0.5W TO18

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
  • Resistance - RDS(On): 150 Ohm
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
Paquete: TO-206AA, TO-18-3 Metal Can
En existencias13.440
30V
-
5mA @ 15V
-
1V @ 1nA
25pF @ 15V
150 Ohm
500mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
hot 2N4858A
Central Semiconductor Corp

JFET N-CH 40V 0.36W TO-18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800mV @ 0.5nA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 10V (VGS)
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
Paquete: TO-206AA, TO-18-3 Metal Can
En existencias24.264
40V
-
8mA @ 15V
-
800mV @ 0.5nA
10pF @ 10V (VGS)
60 Ohm
360mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
hot MMBF5459
Fairchild/ON Semiconductor

JFET N-CH 25V 350MW SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias41.892
25V
-
4mA @ 15V
-
2V @ 10nA
7pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3