Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 72A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias2.848 |
|
MOSFET (Metal Oxide) | 60V | 72A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 1985pF @ 25V | ±20V | - | 150W (Tc) | 12 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 30A I2PAK
|
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA |
En existencias4.784 |
|
MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 8.3nC @ 5V | 1043pF @ 15V | ±20V | - | 46W (Tc) | 13.9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias5.968 |
|
MOSFET (Metal Oxide) | 100V | 36A (Tc) | 4V, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | ±16V | - | 3.8W (Ta), 140W (Tc) | 44 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 33A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias55.920 |
|
MOSFET (Metal Oxide) | 30V | 33A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | ±20V | - | 57W (Tc) | 31 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3A TSM
|
Paquete: TO-236-3, SC-59, SOT-23-3 |
En existencias2.048 |
|
MOSFET (Metal Oxide) | 30V | 3A (Ta) | 1.8V, 4V | - | 4.3nC @ 4V | 270pF @ 10V | ±12V | - | 700mW (Ta) | 71 mOhm @ 2A, 4V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
ON Semiconductor |
MOSFET N-CH 1500V 2A TO-3PML
|
Paquete: TO-3P-3 Full Pack |
En existencias126.216 |
|
MOSFET (Metal Oxide) | 1500V | 2A (Ta) | 10V | - | 37.5nC @ 10V | 380pF @ 30V | ±35V | - | 3W (Ta), 50W (Tc) | 13 Ohm @ 1A, 10V | 150°C (TJ) | Through Hole | TO-3PML | TO-3P-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 100V 85A TO220AB
|
Paquete: TO-220-3 |
En existencias88.500 |
|
MOSFET (Metal Oxide) | 100V | 85A (Tc) | 10V | 4.5V @ 250µA | 120nC @ 10V | 4660pF @ 50V | ±20V | - | 3.75W (Ta), 227W (Tc) | 10 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.9A TSM
|
Paquete: TO-236-3, SC-59, SOT-23-3 |
En existencias5.088 |
|
MOSFET (Metal Oxide) | 30V | 2.9A (Ta) | 4V, 10V | 2.6V @ 1mA | 3.3nC @ 4V | 180pF @ 10V | ±20V | - | 700mW (Ta) | 83 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 28SOIC
|
Paquete: 28-SOIC (0.295", 7.50mm Width) |
En existencias5.360 |
|
MOSFET (Metal Oxide) | 55V | - | - | - | - | - | - | - | - | - | - | Surface Mount | 28-SO | 28-SOIC (0.295", 7.50mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 48A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias60.312 |
|
MOSFET (Metal Oxide) | 30V | 48A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23nC @ 10V | 1235pF @ 15V | ±20V | - | 47.3W (Tc) | 14 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 24V 12A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias61.020 |
|
MOSFET (Metal Oxide) | 24V | 12A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 21nC @ 4.5V | 2400pF @ 20V | ±20V | - | 1.25W (Ta), 86W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO-220F
|
Paquete: TO-220-3 Full Pack |
En existencias12.540 |
|
MOSFET (Metal Oxide) | 400V | 10.5A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 1090pF @ 25V | ±30V | - | 44W (Tc) | 530 mOhm @ 5.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 11A I2PAK
|
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA |
En existencias15.300 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1490pF @ 25V | ±30V | - | 125W (Tc) | 380 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET P-CH 60V 8A TO-220FP
|
Paquete: TO-220-3 Full Pack |
En existencias450.168 |
|
MOSFET (Metal Oxide) | 60V | 8A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 850pF @ 25V | ±20V | - | 225W (Tc) | 200 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 600V 10A TO220
|
Paquete: TO-220-3 |
En existencias15.000 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4.5V @ 100µA | 59nC @ 10V | 1740pF @ 25V | ±30V | - | 150W (Tc) | 640 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET IFX OPTIMOS TO247
|
Paquete: - |
En existencias7.104 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
MOSFET N-CH 600V 40A SOT-227
|
Paquete: SOT-227-4, miniBLOC |
En existencias6.416 |
|
MOSFET (Metal Oxide) | 600V | 40A | 10V | 3.9V @ 1mA | 259nC @ 10V | 7015pF @ 25V | ±20V | - | 290W (Tc) | 70 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 55V 260A TO-220
|
Paquete: TO-220-3 |
En existencias3.024 |
|
MOSFET (Metal Oxide) | 55V | 260A (Tc) | 10V | 4V @ 250µA | 140nC @ 10V | 10800pF @ 25V | ±20V | - | 480W (Tc) | 3.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
EPC |
TRANS GAN 200V 8.5A BUMPED DIE
|
Paquete: Die |
En existencias2.288 |
|
GaNFET (Gallium Nitride) | 200V | 8.5A (Ta) | 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | 270pF @ 100V | +6V, -4V | - | - | 50 mOhm @ 7A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
IXYS |
MOSFET N-CH 75V 230A TO-263AA
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias3.664 |
|
MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4V @ 1mA | 178nC @ 10V | 10500pF @ 25V | - | - | 480W (Tc) | 4.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 300V 36A TO-220
|
Paquete: TO-220-3 |
En existencias2.624 |
|
MOSFET (Metal Oxide) | 300V | 36A (Tc) | - | - | 70nC @ 10V | 2250pF @ 25V | - | - | - | 110 mOhm @ 500mA, 10V | - | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 33A TO220F
|
Paquete: TO-220-3 Full Pack |
En existencias241.464 |
|
MOSFET (Metal Oxide) | 100V | 9A (Ta), 33A (Tc) | 10V | 4.1V @ 250µA | 27nC @ 10V | 1670pF @ 15V | ±20V | - | 2.1W (Ta), 33W (Tc) | 14.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 30V 75A U8FL
|
Paquete: 8-PowerWDFN |
En existencias7.312 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
STMicroelectronics |
MOSFET N-CH 600V 2.4A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias117.828 |
|
MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 4.5V @ 50µA | 11.8nC @ 10V | 311pF @ 25V | ±30V | - | 45W (Tc) | 3.6 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 900V 6.9A TO-247
|
Paquete: TO-247-3 |
En existencias7.968 |
|
MOSFET (Metal Oxide) | 900V | 6.9A (Tc) | 10V | 3.5V @ 460µA | 42nC @ 10V | 1100pF @ 100V | ±20V | - | 104W (Tc) | 800 mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Diodes Incorporated |
MOSFET N-CH 100V 17A TO252
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias5.280 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 6V, 10V | 3V @ 250µA | 25.2nC @ 10V | 1172pF @ 50V | ±20V | - | 34W (Tc) | 80 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 30V MICROFOOT
|
Paquete: 4-UFBGA |
En existencias5.280 |
|
MOSFET (Metal Oxide) | 30V | - | 2.5V, 10V | 1.2V @ 250µA | 80nC @ 10V | 2240pF @ 15V | ±12V | - | 1.1W (Ta), 2.7W (Tc) | 31 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-UFBGA |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 3.8A 6-WLCSP
|
Paquete: 6-UFBGA, WLCSP |
En existencias59.280 |
|
MOSFET (Metal Oxide) | 20V | 3.8A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 25nC @ 4.5V | 1570pF @ 10V | ±8V | - | 1.9W (Ta) | 64 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WLCSP | 6-UFBGA, WLCSP |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-247
|
Paquete: TO-247-3 |
En existencias7.848 |
|
MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 3.5V @ 1.5mA | 65nC @ 10V | 3000pF @ 300V | ±30V | Super Junction | 230W (Tc) | 88 mOhm @ 9.4A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 13A SGL DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias617.748 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta), 79A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 41nC @ 10V | 3052pF @ 15V | ±20V | - | 1.4W (Ta), 52W (Tc) | 3.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |