Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Global Power Technologies Group |
MOSFET N-CH 500V 13A TO220
|
Paquete: TO-220-3 |
En existencias7.264 |
|
MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1918pF @ 25V | ±30V | - | 183W (Tc) | 480 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 0.4A TO-205
|
Paquete: - |
En existencias7.936 |
|
- | - | - | 5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET P-CH 40V 8.7A 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias3.216 |
|
MOSFET (Metal Oxide) | 40V | 8.7A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 50nC @ 5V | - | ±20V | - | 1.5W (Ta) | 15.5 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 20V MICROFOOT
|
Paquete: 4-XFBGA, CSPBGA |
En existencias2.272 |
|
MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | 1.5V @ 250µA | 21nC @ 10V | 475pF @ 10V | ±12V | - | 780mW (Ta), 1.8W (Tc) | 73 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
||
ON Semiconductor |
MOSFET N-CH 30V 9.1A SO-8FL
|
Paquete: 8-PowerTDFN, 5 Leads |
En existencias4.816 |
|
MOSFET (Metal Oxide) | 30V | 9.1A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 30nC @ 4.5V | 2310pF @ 24V | ±20V | - | 900mW (Ta) | 6 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 35A TO220NIS
|
Paquete: TO-220-3 Full Pack |
En existencias3.408 |
|
MOSFET (Metal Oxide) | 60V | 35A (Ta) | 4V, 10V | 2.5V @ 1mA | 91nC @ 10V | 5120pF @ 10V | ±20V | - | 35W (Tc) | 12.5 mOhm @ 18A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET P-CH 150V 27A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias86.400 |
|
MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 2210pF @ 25V | ±20V | - | 250W (Tc) | 150 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 200V 74A TO-268
|
Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
En existencias3.712 |
|
MOSFET (Metal Oxide) | 200V | 74A (Tc) | 10V | 5V @ 250µA | 107nC @ 10V | 3300pF @ 25V | ±20V | - | 480W (Tc) | 34 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 1200V 1.4A TO-220
|
Paquete: TO-220-3 |
En existencias103.464 |
|
MOSFET (Metal Oxide) | 1200V | 1.4A (Tc) | 10V | 4.5V @ 100µA | 24.8nC @ 10V | 666pF @ 25V | ±20V | - | 86W (Tc) | 13 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 18A TO247
|
Paquete: TO-247-3 |
En existencias5.360 |
|
MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 4.5V @ 250µA | 68nC @ 10V | 3785pF @ 25V | ±30V | - | 417W (Tc) | 390 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Fairchild/ON Semiconductor |
N-CHANNEL POWERTRENCH MOSFET
|
Paquete: - |
En existencias4.208 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias5.344 |
|
MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | ±20V | - | 3.7W (Ta), 60W (Tc) | 600 mOhm @ 4.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 60V
|
Paquete: - |
En existencias6.896 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 9A TO262
|
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA |
En existencias3.264 |
|
MOSFET (Metal Oxide) | 100V | 9A (Ta), 58A (Tc) | 10V | 4.1V @ 250µA | 27nC @ 10V | 1670pF @ 50V | ±20V | - | 2.1W (Ta), 100W (Tc) | 14.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET N-CH 100V SO8FL
|
Paquete: 8-PowerTDFN, 5 Leads |
En existencias6.768 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Ta), 19A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 7.9nC @ 10V | 480pF @ 25V | ±16V | - | 3.5W (Ta), 42W (Tc) | 46 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Texas Instruments |
MOSFET N-CH 30V 25A 8VSON
|
Paquete: 8-PowerTDFN |
En existencias144.060 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 2V @ 250µA | 15.1nC @ 10V | 1030pF @ 15V | ±20V | - | 3.1W (Ta), 36W (Tc) | 9.7 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 80V 49A 8TDSON
|
Paquete: 8-PowerTDFN |
En existencias3.536 |
|
MOSFET (Metal Oxide) | 80V | 49A (Tc) | 6V, 10V | 3.8V @ 22µA | 18nC @ 10V | 1300pF @ 40V | ±20V | - | 2.5W (Ta), 50W (Tc) | 11.7 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 100A LFPAK
|
Paquete: SC-100, SOT-669 |
En existencias6.432 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.2V @ 2mA | 121.35nC @ 10V | 8598pF @ 15V | ±20V | - | 238W (Tc) | 1.02 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias60.012 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2.2V @ 13µA | 20nC @ 10V | 1520pF @ 15V | ±16V | - | 42W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET P-CH 20V 1.2A 3DFN
|
Paquete: 3-XDFN Exposed Pad |
En existencias5.664 |
|
MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 1.2V, 4.5V | 950mV @ 250µA | 2.3nC @ 4.5V | 116pF @ 10V | ±8V | - | 360mW (Ta), 5.68W (Tc) | 447 mOhm @ 1.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias16.512 |
|
MOSFET (Metal Oxide) | 30V | 80A (Ta) | 4.5V, 10V | 2V @ 250µA | 170nC @ 5V | 10500pF @ 15V | ±20V | - | 187W (Tc) | 3.5 mOhm @ 80A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Texas Instruments |
MOSFET N-CH 25V 52A 8-SON
|
Paquete: 8-PowerTDFN |
En existencias182.904 |
|
MOSFET (Metal Oxide) | 25V | 14A (Ta), 52A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 3.8nC @ 4.5V | 530pF @ 12.5V | +16V, -12V | - | 3W (Ta) | 11 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 600V 43A TO247AC
|
Paquete: TO-247-3 |
En existencias17.772 |
|
MOSFET (Metal Oxide) | 600V | 43A (Tc) | 10V | 4V @ 250µA | 182nC @ 10V | 3600pF @ 100V | ±30V | - | 313W (Tc) | 65 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 90A TO220AB
|
Paquete: TO-220-3 |
En existencias8.484 |
|
MOSFET (Metal Oxide) | 200V | 90A (Tc) | 7.5V, 10V | 4V @ 250µA | 96nC @ 10V | 4132pF @ 100V | ±20V | - | 375W (Tc) | 17 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 20A TO247
|
Paquete: TO-247-3 |
En existencias10.812 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4V @ 1mA | 60nC @ 10V | 1400pF @ 25V | ±20V | - | 120W (Tc) | 196 mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 130A TO-220AB
|
Paquete: TO-220-3 |
En existencias4.480 |
|
MOSFET (Metal Oxide) | 75V | 130A (Tc) | 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | ±20V | - | 200W (Tc) | 6.3 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 560V 52A TO-247
|
Paquete: TO-247-3 |
En existencias780.204 |
|
MOSFET (Metal Oxide) | 560V | 52A (Tc) | 10V | 3.9V @ 2.7mA | 290nC @ 10V | 6800pF @ 25V | ±20V | - | 417W (Tc) | 70 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 170MA SOT23
|
Paquete: TO-236-3, SC-59, SOT-23-3 |
En existencias300.600 |
|
MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 0V, 10V | 1.8V @ 50µA | 2.8nC @ 7V | 68pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET P-CH 150V 3A PPAK SO-8
|
Paquete: PowerPAK? SO-8 |
En existencias31.812 |
|
MOSFET (Metal Oxide) | 150V | 3A (Ta) | 6V, 10V | 4V @ 250µA | 135nC @ 10V | - | ±20V | - | 1.9W (Ta) | 90 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 8.8A 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias3.980.904 |
|
MOSFET (Metal Oxide) | 30V | 8.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 40nC @ 10V | 1845pF @ 15V | ±25V | - | 2.5W (Ta) | 20 mOhm @ 8.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |