Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 80A TO262-3
|
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA |
En existencias6.240 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 2.2V @ 60µA | 110nC @ 10V | 8180pF @ 25V | ±16V | - | 107W (Tc) | 5.1 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias4.688 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 2840pF @ 25V | ±20V | - | 140W (Tc) | 7.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 800V 4A TO-252
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias6.032 |
|
MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3.9V @ 240µA | 26nC @ 10V | 570pF @ 25V | ±20V | - | 63W (Tc) | 1.3 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 600V 7.3A TO-251
|
Paquete: TO-251-3 Short Leads, IPak, TO-251AA |
En existencias5.296 |
|
MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 5.5V @ 350µA | 35nC @ 10V | 970pF @ 25V | ±20V | - | 83W (Tc) | 600 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223
|
Paquete: TO-261-4, TO-261AA |
En existencias2.176 |
|
MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 1.8V @ 400µA | 17nC @ 10V | 368pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias3.360 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 3V @ 250µA | 14nC @ 4.5V | - | ±20V | Schottky Diode (Isolated) | 2.5W (Ta) | 25 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
NXP |
MOSFET N-CH 80V 200A D2PAK-7
|
Paquete: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
En existencias7.920 |
|
MOSFET (Metal Oxide) | 80V | - | - | - | - | - | - | - | - | - | - | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
IXYS |
MOSFET N-CH 55V 100A ISOPLUS-220
|
Paquete: ISOPLUS220? |
En existencias3.392 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 1mA | 100nC @ 10V | - | ±20V | - | 150W (Tc) | 7.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 1A SC-62
|
Paquete: TO-243AA |
En existencias21.480 |
|
MOSFET (Metal Oxide) | 60V | 1A (Ta) | 4V, 10V | 2V @ 1mA | 6.5nC @ 10V | 155pF @ 10V | ±20V | - | 500mW (Ta) | 730 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | PW-MINI | TO-243AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 6.4A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias139.476 |
|
MOSFET (Metal Oxide) | 100V | 6.4A (Ta), 30A (Tc) | 10V | 4.5V @ 250µA | 30nC @ 10V | 1740pF @ 50V | ±20V | - | 3.1W (Ta), 71W (Tc) | 37 mOhm @ 5.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 20A IPAK
|
Paquete: TO-251-3 Short Leads, IPak, TO-251AA |
En existencias7.024 |
|
MOSFET (Metal Oxide) | 55V | 20A (Tc) | 10V | 4V @ 250µA | 44nC @ 20V | 680pF @ 25V | ±20V | - | 93W (Tc) | 36 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 1000V 1.6A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias5.520 |
|
MOSFET (Metal Oxide) | 1000V | 1.6A (Tc) | 10V | 5V @ 250µA | 15.5nC @ 10V | 520pF @ 25V | ±30V | - | 2.5W (Ta), 50W (Tc) | 9 Ohm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC
|
Paquete: TO-247-3 |
En existencias4.736 |
|
MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 4V @ 250µA | 74nC @ 10V | 2200pF @ 25V | ±30V | - | 190W (Tc) | 400 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-220AB
|
Paquete: TO-220-3 |
En existencias72.960 |
|
MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 4.5V @ 250µA | 22nC @ 10V | 600pF @ 25V | ±30V | - | 74W (Tc) | 1 Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 150V 25A POWERFLAT
|
Paquete: 8-PowerVDFN |
En existencias3.248 |
|
MOSFET (Metal Oxide) | 150V | 25A (Tc) | 10V | 4V @ 250µA | 48nC @ 10V | 2710pF @ 25V | ±20V | - | 80W (Tc) | 63 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (6x5) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 40V BARE DIE
|
Paquete: Die |
En existencias4.336 |
|
MOSFET (Metal Oxide) | 40V | 1A (Tj) | 10V | 4V @ 150µA | - | - | - | - | - | 100 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO220
|
Paquete: TO-220-3 |
En existencias3.584 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO263
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias4.256 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V TO-251-3
|
Paquete: TO-251-3 Short Leads, IPak, TO-251AA |
En existencias3.520 |
|
MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | - | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | - | - | - | 1 Ohm @ 1.5A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251 | TO-251-3 Short Leads, IPak, TO-251AA |
||
IXYS |
MOSFET N-CH 1000V 26A TO-264
|
Paquete: TO-264-3, TO-264AA |
En existencias3.600 |
|
MOSFET (Metal Oxide) | 1000V | 26A (Tc) | 10V | 6.5V @ 1mA | 197nC @ 10V | 11900pF @ 25V | ±30V | - | 780W (Tc) | 390 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 800V 32A TO-264
|
Paquete: TO-264-3, TO-264AA |
En existencias4.384 |
|
MOSFET (Metal Oxide) | 800V | 32A (Tc) | 10V | 5V @ 8mA | 150nC @ 10V | 8800pF @ 25V | ±30V | - | 830W (Tc) | 270 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 300V 69A TO-3P
|
Paquete: TO-3P-3, SC-65-3 |
En existencias3.392 |
|
MOSFET (Metal Oxide) | 300V | 69A (Tc) | 10V | 5V @ 250µA | 180nC @ 10V | 4960pF @ 25V | ±20V | - | 500W (Tc) | 49 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET P-CH 20V 9.8A 8SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias7.136 |
|
MOSFET (Metal Oxide) | 20V | 9.8A (Ta) | 2.5V, 10V | 1.4V @ 250µA | 56nC @ 4.5V | - | ±12V | - | 1.5W (Ta) | 11 mOhm @ 13.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
IXYS |
MOSFET N-CH 650V 4A X2 TO-220
|
Paquete: TO-220-3 |
En existencias7.984 |
|
MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | ±30V | - | 32W (Tc) | 550 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 650V 35A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias4.464 |
|
MOSFET (Metal Oxide) | 650V | 35A (Tc) | 10V | 5V @ 3.5mA | 145nC @ 10V | 4895pF @ 100V | ±20V | - | 357W (Tc) | 110 mOhm @ 17.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 300A D2PAK
|
Paquete: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
En existencias5.360 |
|
MOSFET (Metal Oxide) | 60V | 300A (Tc) | 10V | 4V @ 250µA | 243nC @ 10V | 19250pF @ 30V | ±20V | - | 3.8W (Ta), 250W (Tc) | 1.4 mOhm @ 39A, 10V | -55°C ~ 175°C (TJ) | - | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
STMicroelectronics |
N-CHANNEL 600 V, 0.28 OHM TYP.,
|
Paquete: 8-PowerVDFN |
En existencias5.280 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 21nC @ 10V | - | ±25V | - | 90W (Tc) | 320 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (8x8) HV | 8-PowerVDFN |
||
ON Semiconductor |
MOSFET N-CH 50V 100MA SC59
|
Paquete: SC-70, SOT-323 |
En existencias50.538 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 1.5V, 4V | - | 1.57nC @ 10V | 6.6pF @ 10V | ±10V | - | 150mW (Ta) | 7.8 Ohm @ 50mA, 4V | 150°C (TJ) | Surface Mount | 3-MCP | SC-70, SOT-323 |
||
Infineon Technologies |
MOSFET N-CH 60V 43A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias9.756 |
|
MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | ±20V | - | 71W (Tc) | 15.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 80V 10A 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias30.348 |
|
MOSFET (Metal Oxide) | 80V | 10A (Ta) | 10V | 4.9V @ 100µA | 41nC @ 10V | 1620pF @ 25V | ±20V | - | 2.5W (Ta) | 13.4 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |