Página 81 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 3.259
Página  81/109
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IPG20N06S415ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
Paquete: 8-PowerVDFN
En existencias4.000
Standard
60V
20A
15.5 mOhm @ 17A, 10V
4V @ 20µA
29nC @ 10V
2260pF @ 25V
50W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
hot IRF6723M2DTRPBF
Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DirectFET? Isometric MA
  • Supplier Device Package: DIRECTFET? MA
Paquete: DirectFET? Isometric MA
En existencias45.684
Logic Level Gate
30V
15A
6.6 mOhm @ 15A, 10V
2.35V @ 25µA
14nC @ 4.5V
1380pF @ 15V
2.7W
-55°C ~ 175°C (TJ)
Surface Mount
DirectFET? Isometric MA
DIRECTFET? MA
BSD840N L6327
Infineon Technologies

MOSFET 2N-CH 20V 0.88A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 880mA
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 880mA, 2.5V
  • Vgs(th) (Max) @ Id: 750mV @ 1.6µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
Paquete: 6-VSSOP, SC-88, SOT-363
En existencias7.312
Logic Level Gate
20V
880mA
400 mOhm @ 880mA, 2.5V
750mV @ 1.6µA
0.26nC @ 2.5V
78pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
hot IRF9952
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias557.988
Logic Level Gate
30V
3.5A, 2.3A
100 mOhm @ 2.2A, 10V
1V @ 250µA
14nC @ 10V
190pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AO4801AL_001
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias5.328
Logic Level Gate
30V
5A
48 mOhm @ 5A, 10V
1.3V @ 250µA
9nC @ 4.5V
780pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI4830ADY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias2.048
Logic Level Gate
30V
5.7A
22 mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI3983DV-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 2.1A 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias156.012
Logic Level Gate
20V
2.1A
110 mOhm @ 2.5A, 4.5V
1.1V @ 250µA
7.5nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SIS902DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 75V 4A PPAK 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 186 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 38V
  • Power - Max: 15.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
Paquete: PowerPAK? 1212-8 Dual
En existencias5.600
Standard
75V
4A
186 mOhm @ 3A, 10V
2.5V @ 250µA
6nC @ 10V
175pF @ 38V
15.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
SP8M6FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/3.5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.792
Logic Level Gate
30V
5A, 3.5A
51 mOhm @ 5A, 10V
2.5V @ 1mA
3.9nC @ 5V
230pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SI4330DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 6.6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A
  • Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias666.552
Logic Level Gate
30V
6.6A
16.5 mOhm @ 8.7A, 10V
3V @ 250µA
20nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI1553DL-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
  • Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias1.019.820
Logic Level Gate
20V
660mA, 410mA
385 mOhm @ 660mA, 4.5V
600mV @ 250µA (Min)
1.2nC @ 4.5V
-
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
NTJD4105CT4
ON Semiconductor

MOSFET N/P-CH 20V/8V SOT-363

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V, 8V
  • Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
  • Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias5.840
Logic Level Gate
20V, 8V
630mA, 775mA
375 mOhm @ 630mA, 4.5V
1.5V @ 250µA
3nC @ 4.5V
46pF @ 20V
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
TPCF8201(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 3A VS-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)
Paquete: 8-SMD, Flat Lead
En existencias6.416
Logic Level Gate
20V
3A
49 mOhm @ 1.5A, 4.5V
1.2V @ 200µA
7.5nC @ 5V
590pF @ 10V
330mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
VS-8 (2.9x1.5)
NTJD4001NT1
ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
  • Power - Max: 272mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias3.376
Standard
30V
250mA
1.5 Ohm @ 10mA, 4V
1.5V @ 100µA
1.3nC @ 5V
33pF @ 5V
272mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
NTMC1300R2
ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A, 1.8A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias3.792
Logic Level Gate
30V
2.2A, 1.8A
90 mOhm @ 3A, 10V
2.2V @ 250µA
5nC @ 4.5V
300pF @ 20V
2W
-65°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
NTL4502NT1
ON Semiconductor

MOSFET 4N-CH 24V 11.4A 16PIN

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 11.4A
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 20V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-PowerQFN
  • Supplier Device Package: PlnPAK
Paquete: 16-PowerQFN
En existencias7.664
Logic Level Gate
24V
11.4A
11 mOhm @ 15A, 10V
2V @ 250µA
13nC @ 4.5V
1605pF @ 20V
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
16-PowerQFN
PlnPAK
hot NDM3000
Fairchild/ON Semiconductor

MOSFET 3N/3P-CH 30V 3A SO16

  • FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Paquete: 16-SOIC (0.154", 3.90mm Width)
En existencias211.392
Logic Level Gate
30V
3A
90 mOhm @ 3A, 10V
3V @ 250µA
25nC @ 10V
360pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
APTM20HM16FTG
Microsemi Corporation

MOSFET 4N-CH 200V 104A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 104A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Paquete: SP4
En existencias4.320
Standard
200V
104A
19 mOhm @ 52A, 10V
5V @ 2.5mA
140nC @ 10V
7220pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
ALD1102BPAL
Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8DIP

  • FET Type: 2 P-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1.2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
Paquete: 8-DIP (0.300", 7.62mm)
En existencias5.008
Standard
10.6V
-
270 Ohm @ 5V
1.2V @ 10µA
-
10pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
NVMFD5873NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Paquete: 8-PowerTDFN
En existencias7.776
Logic Level Gate
60V
10A
13 mOhm @ 15A, 10V
2.5V @ 250µA
30.5nC @ 10V
1560pF @ 25V
3.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
QS6J3TR
Rohm Semiconductor

MOSFET 2P-CH 20V 1.5A TSMT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias6.544
Logic Level Gate
20V
1.5A
215 mOhm @ 1.5A, 4.5V
2V @ 1mA
3nC @ 4.5V
270pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
DMC1030UFDBQ-13
Diodes Incorporated

MOSFET N/P-CH 12V 5.1A UDFN2020

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paquete: 6-UDFN Exposed Pad
En existencias6.992
Standard
12V
5.1A
34 mOhm @ 4.6A, 4.5V
1V @ 250µA
23.1nC @ 10V
1003pF @ 6V
1.36W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
CPH6636R-TL-W
ON Semiconductor

MOSFET 2N-CH 24V 6A CPH6

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 900mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias5.904
Logic Level Gate, 2.5V Drive
24V
6A
20 mOhm @ 3A, 4.5V
-
3nC @ 4.5V
-
900mW
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-CPH
TSM9933DCS RLG
TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -20V, -

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias5.216
Standard
20V
4.7A (Tc)
60 mOhm @ 4.7A, 4.5V
1.4V @ 250µA
8.5nC @ 4.5V
640pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SI7272DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 25A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
  • Power - Max: 22W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
Paquete: PowerPAK? SO-8 Dual
En existencias96.456
Logic Level Gate
30V
25A
9.3 mOhm @ 15A, 10V
2.5V @ 250µA
26nC @ 10V
1100pF @ 15V
22W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
DMC4029SSD-13
Diodes Incorporated

MOSFET N/P-CH 40V 7A/5.1A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias2.096
Logic Level Gate
40V
7A, 5.1A
24 mOhm @ 6A, 10V
3V @ 250µA
19.1nC @ 10V
1060pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ALD110904SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V
  • Vgs(th) (Max) @ Id: 420mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias6.360
Standard
10.6V
12mA, 3mA
500 Ohm @ 4.4V
420mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
NX138BKSX
Nexperia USA Inc.

NX138BKS/SC-88/REEL 7" Q1/T1 *

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias3.568
Standard
60V
210mA (Ta)
3.5 Ohm @ 200mA, 10V
1.5V @ 250µA
0.7nC @ 10V
20pF @ 30V
320mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
DMC3028LSDXQ-13
Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias3.056
Standard
30V
5.5A, 5.8A
27 mOhm @ 6A, 10V
3V @ 250µA
13.2nC @ 5V
641pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDS89161LZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 2.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 302pF @ 50V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias15.252
Logic Level Gate
100V
2.7A
105 mOhm @ 2.7A, 10V
2.2V @ 250µA
5.3nC @ 10V
302pF @ 50V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO