Página 101 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF8910GTRPBF	Infineon Technologies	MOSFET 2N-CH 20V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias564.096	Logic Level Gate	20V	10A	13.4 mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	960pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSL306NL6327HTSA1	Infineon Technologies	MOSFET 2N-CH 30V 2.3A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	Paquete: SOT-23-6 Thin, TSOT-23-6	En existencias6.976	Logic Level Gate	30V	2.3A	57 mOhm @ 2.3A, 10V	2V @ 11µA	1.6nC @ 5V	275pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
AON4605_001	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 4.3A/3.4A 8DFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (3x2)	Paquete: 8-SMD, Flat Lead	En existencias3.584	Logic Level Gate	30V	4.3A, 3.4A	50 mOhm @ 4.3A, 10V	2.5V @ 250µA	5nC @ 10V	210pF @ 15V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (3x2)
PMDPB95XNE,115	NXP	MOSFET 2N-CH 30V 2.4A HUSON6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V Power - Max: 475mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	Paquete: 6-UDFN Exposed Pad	En existencias2.048	Logic Level Gate	30V	2.4A	120 mOhm @ 2A, 4.5V	1.5V @ 250µA	2.5nC @ 4.5V	143pF @ 15V	475mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
APTC60DDAM70CT1G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP1 FET Type: 2 N-Channel (Dual) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Paquete: SP1	En existencias6.272	Super Junction	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SI1551DL-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 290mA, 410mA Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Paquete: 6-TSSOP, SC-88, SOT-363	En existencias498.240	Logic Level Gate	20V	290mA, 410mA	1.9 Ohm @ 290mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI6925ADQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 3.3A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Paquete: 8-TSSOP (0.173", 4.40mm Width)	En existencias387.024	Logic Level Gate	20V	3.3A	45 mOhm @ 3.9A, 4.5V	1.8V @ 250µA	6nC @ 4.5V	-	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTM100A12STG	Microsemi Corporation	MOSFET 2N-CH 1000V 68A LP8W FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 68A Rds On (Max) @ Id, Vgs: 120 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 616nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17400pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Paquete: SP3	En existencias7.504	Standard	1000V (1kV)	68A	120 mOhm @ 34A, 10V	5V @ 10mA	616nC @ 10V	17400pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SI4388DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 10.7A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V Power - Max: 3.3W, 3.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias13.812	Standard	30V	10.7A, 11.3A	16 mOhm @ 8A, 10V	3V @ 250µA	27nC @ 10V	946pF @ 15V	3.3W, 3.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMN6A09DN8TC	Diodes Incorporated	MOSFET 2N-CH 60V 4.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias372.300	Logic Level Gate	60V	4.3A	40 mOhm @ 8.2A, 10V	3V @ 250µA	24.2nC @ 5V	1407pF @ 40V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ZXMN3A06DN8TC	Diodes Incorporated	MOSFET 2N-CH 30V 4.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias363.912	Logic Level Gate	30V	4.9A	35 mOhm @ 9A, 10V	1V @ 250µA (Min)	17.5nC @ 10V	796pF @ 25V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SP8M9TB	Rohm Semiconductor	MOSFET N/P-CH 30V 9A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias3.232	Logic Level Gate	30V	9A, 5A	18 mOhm @ 9A, 10V	2.5V @ 1mA	21nC @ 5V	1190pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MMDF2N02ER2	ON Semiconductor	MOSFET 2N-CH 25V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias884.412	Logic Level Gate	25V	3.6A	100 mOhm @ 2.2A, 10V	3V @ 250µA	30nC @ 10V	532pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NDS8936	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias1.170.456	Logic Level Gate	30V	5.3A	35 mOhm @ 5.3A, 10V	2.8V @ 250µA	30nC @ 10V	720pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF9395MTRPBF	Infineon Technologies	MOSFET 2P-CH 30V 14A DIRECTFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V Power - Max: 2.1W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric MC Supplier Device Package: DIRECTFET? MC	Paquete: DirectFET? Isometric MC	En existencias467.496	Logic Level Gate	30V	14A	7 mOhm @ 14A, 10V	2.4V @ 50µA	64nC @ 10V	3241pF @ 15V	2.1W	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET? Isometric MC	DIRECTFET? MC
IRFHS9351TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 2.3A PQFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VQFN Supplier Device Package: 6-PQFN (2x2)	Paquete: 6-VQFN	En existencias299.256	Logic Level Gate	30V	2.3A	170 mOhm @ 3.1A, 10V	2.4V @ 10µA	3.7nC @ 10V	160pF @ 25V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-VQFN	6-PQFN (2x2)
ALD212902SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias4.224	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMC3016LDV-7	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI333 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	Paquete: 8-PowerVDFN	En existencias5.968	Standard	30V	21A (Tc), 15A (Tc)	12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V	2.4V @ 250µA	9.5nC @ 4.5V	1184pF @ 15V, 1188pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
DMN3032LFDBQ-13	Diodes Incorporated	MOSFET 2NCH 30V 6.2A UDFN2020 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Paquete: 6-UDFN Exposed Pad	En existencias7.552	Standard	30V	6.2A (Ta)	30 mOhm @ 5.8A, 10V	2V @ 250µA	10.6nC @ 10V	500pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SSM6N36FE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.5A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	Paquete: SOT-563, SOT-666	En existencias4.064	Logic Level Gate	20V	500mA	630 mOhm @ 200mA, 5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
DMN67D8LDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 0.23A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Paquete: 6-TSSOP, SC-88, SOT-363	En existencias2.816	Standard	60V	230mA	5 Ohm @ 500mA, 10V	2.5V @ 250µA	0.82nC @ 10V	22pF @ 25V	320mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
APTM50H14FT3G	Microsemi Corporation	MOSFET 4N-CH 500V 26A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Paquete: SP3	En existencias7.376	Standard	500V	26A	168 mOhm @ 13A, 10V	5V @ 1mA	72nC @ 10V	3259pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
CSD87384MT	Texas Instruments	MOSFET 2N-CH 30V 30A 5PTAB FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 25A, 8V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-LGA Supplier Device Package: 5-PTAB (5x3.5)	Paquete: 5-LGA	En existencias4.224	Logic Level Gate	30V	30A	7.7 mOhm @ 25A, 8V	1.9V @ 250µA	9.2nC @ 4.5V	1150pF @ 15V	8W	-55°C ~ 150°C (TJ)	Surface Mount	5-LGA	5-PTAB (5x3.5)
BUK9K13-60EX	Nexperia USA Inc.	MOSFET 2N-CH 60V 40A LFPAK56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V Power - Max: 64W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Paquete: SOT-1205, 8-LFPAK56	En existencias4.464	Logic Level Gate	60V	40A	12.5 mOhm @ 10A, 5V	2.1V @ 1mA	22.4nC @ 5V	2953pF @ 25V	64W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
FDD3510H	Fairchild/ON Semiconductor	MOSFET N/P-CH 80V 4.3A/2.8A DPAK FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	Paquete: TO-252-5, DPak (4 Leads + Tab), TO-252AD	En existencias36.264	Logic Level Gate	80V	4.3A, 2.8A	80 mOhm @ 4.3A, 10V	4V @ 250µA	18nC @ 10V	800pF @ 40V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
SSM6N15AFU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A 2-2J1C FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Paquete: 6-TSSOP, SC-88, SOT-363	En existencias3.280	Logic Level Gate	30V	100mA	3.6 Ohm @ 10mA, 4V	1.5V @ 100µA	-	13.5pF @ 3V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
APTM100A13SG	Microsemi Corporation	MOSFET 2N-CH 1000V 65A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	Paquete: SP6	En existencias6.864	Standard	1000V (1kV)	65A	156 mOhm @ 32.5A, 10V	5V @ 6mA	562nC @ 10V	15200pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
SI7949DP-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 60V 3.2A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Paquete: PowerPAK? SO-8 Dual	En existencias25.356	Logic Level Gate	60V	3.2A	64 mOhm @ 5A, 10V	3V @ 250µA	40nC @ 10V	-	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
FDS89141	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 3.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias20.046	Logic Level Gate	100V	3.5A	62 mOhm @ 3.5A, 10V	4V @ 250µA	7.1nC @ 10V	398pF @ 50V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIA931DJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 4.5A SC70-6L FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	Paquete: PowerPAK? SC-70-6 Dual	En existencias144.000	Logic Level Gate	30V	4.5A	65 mOhm @ 3A, 10V	2.2V @ 250µA	13nC @ 10V	445pF @ 15V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual

IRF8910GTRPBF

Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias564.096

Logic Level Gate

20V

10A

13.4 mOhm @ 10A, 10V

2.55V @ 250µA

11nC @ 4.5V

960pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSL306NL6327HTSA1

Infineon Technologies

MOSFET 2N-CH 30V 2.3A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

Paquete: SOT-23-6 Thin, TSOT-23-6

En existencias6.976

Logic Level Gate

30V

2.3A

57 mOhm @ 2.3A, 10V

2V @ 11µA

1.6nC @ 5V

275pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

AON4605_001

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 4.3A/3.4A 8DFN

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (3x2)

Paquete: 8-SMD, Flat Lead

En existencias3.584

Logic Level Gate

30V

4.3A, 3.4A

50 mOhm @ 4.3A, 10V

2.5V @ 250µA

5nC @ 10V

210pF @ 15V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (3x2)

PMDPB95XNE,115

NXP

MOSFET 2N-CH 30V 2.4A HUSON6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V
Power - Max: 475mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

Paquete: 6-UDFN Exposed Pad

En existencias2.048

Logic Level Gate

30V

2.4A

120 mOhm @ 2A, 4.5V

1.5V @ 250µA

2.5nC @ 4.5V

143pF @ 15V

475mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

APTC60DDAM70CT1G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

Paquete: SP1

En existencias6.272

Super Junction

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

SI1551DL-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 290mA, 410mA
Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

Paquete: 6-TSSOP, SC-88, SOT-363

En existencias498.240

Logic Level Gate

20V

290mA, 410mA

1.9 Ohm @ 290mA, 4.5V

1.5V @ 250µA

1.5nC @ 4.5V

-

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI6925ADQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 3.3A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

Paquete: 8-TSSOP (0.173", 4.40mm Width)

En existencias387.024

Logic Level Gate

20V

3.3A

45 mOhm @ 3.9A, 4.5V

1.8V @ 250µA

6nC @ 4.5V

-

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTM100A12STG

Microsemi Corporation

MOSFET 2N-CH 1000V 68A LP8W

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 616nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 17400pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

Paquete: SP3

En existencias7.504

Standard

1000V (1kV)

68A

120 mOhm @ 34A, 10V

5V @ 10mA

616nC @ 10V

17400pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SI4388DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 10.7A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias13.812

Standard

30V

10.7A, 11.3A

16 mOhm @ 8A, 10V

3V @ 250µA

27nC @ 10V

946pF @ 15V

3.3W, 3.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMN6A09DN8TC

Diodes Incorporated

MOSFET 2N-CH 60V 4.3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias372.300

Logic Level Gate

60V

4.3A

40 mOhm @ 8.2A, 10V

3V @ 250µA

24.2nC @ 5V

1407pF @ 40V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ZXMN3A06DN8TC

Diodes Incorporated

MOSFET 2N-CH 30V 4.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias363.912

Logic Level Gate

30V

4.9A

35 mOhm @ 9A, 10V

1V @ 250µA (Min)

17.5nC @ 10V

796pF @ 25V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SP8M9TB

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias3.232

Logic Level Gate

30V

9A, 5A

18 mOhm @ 9A, 10V

2.5V @ 1mA

21nC @ 5V

1190pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MMDF2N02ER2

ON Semiconductor

MOSFET 2N-CH 25V 3.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias884.412

Logic Level Gate

25V

3.6A

100 mOhm @ 2.2A, 10V

3V @ 250µA

30nC @ 10V

532pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NDS8936

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias1.170.456

Logic Level Gate

30V

5.3A

35 mOhm @ 5.3A, 10V

2.8V @ 250µA

30nC @ 10V

720pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF9395MTRPBF

Infineon Technologies

MOSFET 2P-CH 30V 14A DIRECTFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
Power - Max: 2.1W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric MC
Supplier Device Package: DIRECTFET? MC

Paquete: DirectFET? Isometric MC

En existencias467.496

Logic Level Gate

30V

14A

7 mOhm @ 14A, 10V

2.4V @ 50µA

64nC @ 10V

3241pF @ 15V

2.1W

-40°C ~ 150°C (TJ)

Surface Mount

DirectFET? Isometric MC

DIRECTFET? MC

IRFHS9351TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 2.3A PQFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VQFN
Supplier Device Package: 6-PQFN (2x2)

Paquete: 6-VQFN

En existencias299.256

Logic Level Gate

30V

2.3A

170 mOhm @ 3.1A, 10V

2.4V @ 10µA

3.7nC @ 10V

160pF @ 25V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-VQFN

6-PQFN (2x2)

ALD212902SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias4.224

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMC3016LDV-7

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc), 15A (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

Paquete: 8-PowerVDFN

En existencias5.968

Standard

30V

21A (Tc), 15A (Tc)

12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V

2.4V @ 250µA

9.5nC @ 4.5V

1184pF @ 15V, 1188pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8

DMN3032LFDBQ-13

Diodes Incorporated

MOSFET 2NCH 30V 6.2A UDFN2020

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

Paquete: 6-UDFN Exposed Pad

En existencias7.552

Standard

30V

6.2A (Ta)

30 mOhm @ 5.8A, 10V

2V @ 250µA

10.6nC @ 10V

500pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SSM6N36FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A ES6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

Paquete: SOT-563, SOT-666

En existencias4.064

Logic Level Gate

20V

500mA

630 mOhm @ 200mA, 5V

1V @ 1mA

1.23nC @ 4V

46pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

DMN67D8LDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363

En existencias2.816

Standard

60V

230mA

5 Ohm @ 500mA, 10V

2.5V @ 250µA

0.82nC @ 10V

22pF @ 25V

320mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

APTM50H14FT3G

Microsemi Corporation

MOSFET 4N-CH 500V 26A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

Paquete: SP3

En existencias7.376

Standard

500V

26A

168 mOhm @ 13A, 10V

5V @ 1mA

72nC @ 10V

3259pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

CSD87384MT

Texas Instruments

MOSFET 2N-CH 30V 30A 5PTAB

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 25A, 8V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Power - Max: 8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-LGA
Supplier Device Package: 5-PTAB (5x3.5)

Paquete: 5-LGA

En existencias4.224

Logic Level Gate

30V

30A

7.7 mOhm @ 25A, 8V

1.9V @ 250µA

9.2nC @ 4.5V

1150pF @ 15V

8W

-55°C ~ 150°C (TJ)

Surface Mount

5-LGA

5-PTAB (5x3.5)

BUK9K13-60EX

Nexperia USA Inc.

MOSFET 2N-CH 60V 40A LFPAK56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

Paquete: SOT-1205, 8-LFPAK56

En existencias4.464

Logic Level Gate

60V

40A

12.5 mOhm @ 10A, 5V

2.1V @ 1mA

22.4nC @ 5V

2953pF @ 25V

64W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

FDD3510H

Fairchild/ON Semiconductor

MOSFET N/P-CH 80V 4.3A/2.8A DPAK

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

Paquete: TO-252-5, DPak (4 Leads + Tab), TO-252AD

En existencias36.264

Logic Level Gate

80V

4.3A, 2.8A

80 mOhm @ 4.3A, 10V

4V @ 250µA

18nC @ 10V

800pF @ 40V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

SSM6N15AFU,LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A 2-2J1C

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

Paquete: 6-TSSOP, SC-88, SOT-363

En existencias3.280

Logic Level Gate

30V

100mA

3.6 Ohm @ 10mA, 4V

1.5V @ 100µA

-

13.5pF @ 3V

300mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

APTM100A13SG

Microsemi Corporation

MOSFET 2N-CH 1000V 65A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

Paquete: SP6

En existencias6.864

Standard

1000V (1kV)

65A

156 mOhm @ 32.5A, 10V

5V @ 6mA

562nC @ 10V

15200pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SI7949DP-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 60V 3.2A PPAK SO-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

Paquete: PowerPAK? SO-8 Dual

En existencias25.356

Logic Level Gate

60V

3.2A

64 mOhm @ 5A, 10V

3V @ 250µA

40nC @ 10V

-

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

FDS89141

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 3.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias20.046

Logic Level Gate

100V

3.5A

62 mOhm @ 3.5A, 10V

4V @ 250µA

7.1nC @ 10V

398pF @ 50V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIA931DJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 4.5A SC70-6L

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

Paquete: PowerPAK? SC-70-6 Dual

En existencias144.000

Logic Level Gate

30V

4.5A

65 mOhm @ 3A, 10V

2.2V @ 250µA

13nC @ 10V

445pF @ 15V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual