Página 639 - Diodos - Rectificadores - Simple | Productos semiconductores discretos

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-11DQ03	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1.1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -40°C ~ 150°C	Paquete: DO-204AL, DO-41, Axial	En existencias4.160	30V	1.1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-40°C ~ 150°C
R7221208ESOO	Powerex Inc.	DIODE MODULE 1.2KV 800A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 800A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	Paquete: DO-200AB, B-PUK	En existencias4.224	1200V	800A	1.65V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 1200V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-150KS30	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 150A B42 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35mA @ 300V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-42 Supplier Device Package: B-42 Operating Temperature - Junction: -40°C ~ 200°C	Paquete: B-42	En existencias3.584	300V	150A	1.33V @ 471A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 300V	-	Chassis, Stud Mount	B-42	B-42	-40°C ~ 200°C
1N2129AR	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 60A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Paquete: DO-203AB, DO-5, Stud	En existencias7.408	100V	60A	1.1V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
1N4247	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paquete: A, Axial	En existencias45.180	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
BYC8B-600,118	WeEn Semiconductors	DIODE GEN PURP 500V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.9V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 52ns Current - Reverse Leakage @ Vr: 150µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max)	Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	En existencias7.632	500V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	52ns	150µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	150°C (Max)
SB570-T	Diodes Incorporated	DIODE SCHOTTKY 70V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 70V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Paquete: DO-201AD, Axial	En existencias6.928	70V	5A	800mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 70V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SS1P6L-M3/84A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 590mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	Paquete: DO-220AA	En existencias612.000	60V	1A	590mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
HS1KL RUG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 800V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Paquete: DO-219AB	En existencias4.608	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
F1T6G R0G	TSC America Inc.	DIODE, FAST, 1A, 800V, 500NS, TS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Paquete: T-18, Axial	En existencias7.008	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
LS4448GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max)	Paquete: SOD-80 Variant	En existencias5.216	75V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	8ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
SDURB860TR	SMC Diode Solutions	DIODE GEN PURP 600V D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 8µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	En existencias20.340	600V	-	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	8µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
STTH110UFY	STMicroelectronics	DIODE GEN PURP 1KV 1A SMBFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMBflat Operating Temperature - Junction: -40°C ~ 175°C	Paquete: DO-214AA, SMB	En existencias5.216	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	-	Surface Mount	DO-214AA, SMB	SMBflat	-40°C ~ 175°C
MBRS340T3G	ON Semiconductor	DIODE SCHOTTKY 40V 4A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	Paquete: DO-214AB, SMC	En existencias4.299.852	40V	4A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 40V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
CBS10S30,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1A CST2B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 135pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: CST2B Operating Temperature - Junction: 125°C (Max)	Paquete: 2-SMD, No Lead	En existencias73.692	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	135pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2B	125°C (Max)
STPS2L60	STMicroelectronics	DIODE SCHOTTKY 60V 2A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: 150°C (Max)	Paquete: DO-204AL, DO-41, Axial	En existencias15.384	60V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	150°C (Max)
DB3X317K0L	Panasonic Electronic Components	DIODE SCHOTTKY 30V 1A MINI3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.8ns Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: 22pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G3-B Operating Temperature - Junction: 125°C (Max)	Paquete: TO-236-3, SC-59, SOT-23-3	En existencias72.000	30V	1A	520mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	7.8ns	100µA @ 30V	22pF @ 10V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G3-B	125°C (Max)
1N4004-G	Comchip Technology	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Paquete: DO-204AL, DO-41, Axial	En existencias290.274	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
PDS1040-13	Diodes Incorporated	DIODE SCHOTTKY 40V 10A POWERDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 150°C	Paquete: PowerDI? 5	En existencias1.709.664	40V	10A	510mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 40V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 150°C
JANTXV1N6627-TR	Microchip Technology	DIODE GEN PURP 440V 1.75A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 440 V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 2 µA @ 440 V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	Paquete: -	Request a Quote	440 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 440 V	40pF @ 10V, 1MHz	Through Hole	E, Axial	-	-65°C ~ 150°C
JANTXV1N3890A	Microchip Technology	DIODE GEN PURP 100V 20A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 115pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	Paquete: -	Request a Quote	100 V	20A	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 100 V	115pF @ 10V, 1MHz	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
W1185LC420	IXYS	DIODE GEN PURP 4.2KV 1185A W4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4200 V Current - Average Rectified (Io): 1185A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 mA @ 4200 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: W4 Operating Temperature - Junction: -55°C ~ 160°C	Paquete: -	Request a Quote	4200 V	1185A	2.4 V @ 2420 A	Standard Recovery >500ns, > 200mA (Io)	-	30 mA @ 4200 V	-	Clamp On	DO-200AB, B-PUK	W4	-55°C ~ 160°C
US1A	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	Paquete: -	Request a Quote	50 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 50 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
V3N22HM3-I	Vishay	3A, 200V, DFN3820A TMBS RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C	Paquete: -	Request a Quote	200 V	1.6A	860 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	150pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 175°C
RB520S-307STE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PDS4200HQ-13D	Diodes Incorporated	SCHOTTKY RECTIFIER PDI5 T&R 5K Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C	Paquete: -	Request a Quote	200 V	4A	840 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-65°C ~ 175°C
JAN1N914UR	Microchip Technology	DIODE GEN PURP 75V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 500 nA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	Paquete: -	Request a Quote	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
BAT54W_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 30V 200MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 125°C	Paquete: -	En existencias30.426	30 V	200mA	600 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	2 µA @ 25 V	-	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 125°C

VS-11DQ03

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1.1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C

Paquete: DO-204AL, DO-41, Axial

En existencias4.160

30V

1.1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-40°C ~ 150°C

R7221208ESOO

Powerex Inc.

DIODE MODULE 1.2KV 800A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 800A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 50mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

Paquete: DO-200AB, B-PUK

En existencias4.224

1200V

800A

1.65V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

2µs

50mA @ 1200V

-

Chassis Mount

DO-200AB, B-PUK

-

VS-150KS30

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 150A B42

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35mA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-42
Supplier Device Package: B-42
Operating Temperature - Junction: -40°C ~ 200°C

Paquete: B-42

En existencias3.584

300V

150A

1.33V @ 471A

Standard Recovery >500ns, > 200mA (Io)

-

35mA @ 300V

-

Chassis, Stud Mount

B-42

-40°C ~ 200°C

1N2129AR

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 60A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

Paquete: DO-203AB, DO-5, Stud

En existencias7.408

100V

60A

1.1V @ 60A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

1N4247

Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: A, Axial

En existencias45.180

600V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

1µA @ 600V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

BYC8B-600,118

WeEn Semiconductors

DIODE GEN PURP 500V 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.9V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 52ns
Current - Reverse Leakage @ Vr: 150µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

En existencias7.632

500V

8A

2.9V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

52ns

150µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

150°C (Max)

SB570-T

Diodes Incorporated

DIODE SCHOTTKY 70V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 70V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-201AD, Axial

En existencias6.928

70V

5A

800mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 70V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

SS1P6L-M3/84A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-220AA

En existencias612.000

60V

1A

590mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

80pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

HS1KL RUG

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-219AB

En existencias4.608

800V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

15pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

F1T6G R0G

TSC America Inc.

DIODE, FAST, 1A, 800V, 500NS, TS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: T-18, Axial

En existencias7.008

800V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

LS4448GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)

Paquete: SOD-80 Variant

En existencias5.216

75V

150mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

8ns

25nA @ 20V

4pF @ 0V, 1MHz

Surface Mount

SOD-80 Variant

SOD-80 QuadroMELF

175°C (Max)

SDURB860TR

SMC Diode Solutions

DIODE GEN PURP 600V D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 8µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

En existencias20.340

600V

-

1.7V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

8µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

STTH110UFY

STMicroelectronics

DIODE GEN PURP 1KV 1A SMBFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C

Paquete: DO-214AA, SMB

En existencias5.216

1000V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 1000V

-

Surface Mount

DO-214AA, SMB

SMBflat

-40°C ~ 175°C

MBRS340T3G

ON Semiconductor

DIODE SCHOTTKY 40V 4A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-214AB, SMC

En existencias4.299.852

40V

4A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 40V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 150°C

CBS10S30,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1A CST2B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)

Paquete: 2-SMD, No Lead

En existencias73.692

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

135pF @ 0V, 1MHz

Surface Mount

2-SMD, No Lead

CST2B

125°C (Max)

STPS2L60

STMicroelectronics

DIODE SCHOTTKY 60V 2A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: 150°C (Max)

Paquete: DO-204AL, DO-41, Axial

En existencias15.384

60V

2A

600mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

150°C (Max)

DB3X317K0L

Panasonic Electronic Components

DIODE SCHOTTKY 30V 1A MINI3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.8ns
Current - Reverse Leakage @ Vr: 100µA @ 30V
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
Operating Temperature - Junction: 125°C (Max)

Paquete: TO-236-3, SC-59, SOT-23-3

En existencias72.000

30V

1A

520mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

7.8ns

100µA @ 30V

22pF @ 10V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G3-B

125°C (Max)

1N4004-G

Comchip Technology

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-204AL, DO-41, Axial

En existencias290.274

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

PDS1040-13

Diodes Incorporated

DIODE SCHOTTKY 40V 10A POWERDI5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -65°C ~ 150°C

Paquete: PowerDI? 5

En existencias1.709.664

40V

10A

510mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

700µA @ 40V

-

Surface Mount

PowerDI? 5

-65°C ~ 150°C

JANTXV1N6627-TR

Microchip Technology

DIODE GEN PURP 440V 1.75A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 440 V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 2 µA @ 440 V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

Request a Quote

440 V

1.75A

1.35 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

2 µA @ 440 V

40pF @ 10V, 1MHz

Through Hole

E, Axial

-

-65°C ~ 150°C

JANTXV1N3890A

Microchip Technology

DIODE GEN PURP 100V 20A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

Request a Quote

100 V

20A

1.5 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 100 V

115pF @ 10V, 1MHz

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 175°C

W1185LC420

IXYS

DIODE GEN PURP 4.2KV 1185A W4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4200 V
Current - Average Rectified (Io): 1185A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 mA @ 4200 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C

Paquete: -

Request a Quote

4200 V

1185A

2.4 V @ 2420 A

Standard Recovery >500ns, > 200mA (Io)

-

30 mA @ 4200 V

-

Clamp On

DO-200AB, B-PUK

W4

-55°C ~ 160°C

US1A

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C

Paquete: -

Request a Quote

50 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 50 V

-

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-50°C ~ 150°C

V3N22HM3-I

Vishay

3A, 200V, DFN3820A TMBS RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C

Paquete: -

Request a Quote

200 V

1.6A

860 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

150pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-40°C ~ 175°C

RB520S-307STE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

Request a Quote

-

PDS4200HQ-13D

Diodes Incorporated

SCHOTTKY RECTIFIER PDI5 T&R 5K

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

Request a Quote

200 V

4A

840 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 200 V

-

Surface Mount

PowerDI™ 5

-65°C ~ 175°C

JAN1N914UR

Microchip Technology

DIODE GEN PURP 75V 200MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

Request a Quote

75 V

200mA

1.2 V @ 50 mA

Small Signal =< 200mA (Io), Any Speed

20 ns

500 nA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 175°C

BAT54W_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 30V 200MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 125°C

Paquete: -

En existencias30.426

30 V

200mA

600 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

2 µA @ 25 V

-

Surface Mount

SC-70, SOT-323

SOT-323

-55°C ~ 125°C

Diodos - Rectificadores - Simple

Diodos - Rectificadores - Simple