Página 629 - Diodos - Rectificadores - Simple | Productos semiconductores discretos

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MUR1560	ON Semiconductor	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Paquete: TO-220-2	En existencias210.636	600V	15A	1.5V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
A190RP	Powerex Inc.	DIODE GEN PURP REV 1KV DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 200°C	Paquete: DO-205AB, DO-9, Stud	En existencias3.440	1000V	250A	1.3V @ 250A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	-	-40°C ~ 200°C
HCR4148MTXV	TT Electronics/Optek Technology	DIODE GEN PURP 100V 200MA 3SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD Operating Temperature - Junction: -65°C ~ 200°C	Paquete: 3-SMD, No Lead	En existencias3.136	100V	200mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 75V	2.8pF @ 1.5V, 1MHz	Surface Mount	3-SMD, No Lead	3-SMD	-65°C ~ 200°C
VS-8EWS12STRR-M3	Vishay Semiconductor Diodes Division	DIODE RECTIFIER 1200V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C	Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63	En existencias2.256	1200V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-55°C ~ 150°C
RG 10	Sanken	DIODE GEN PURP 400V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 500µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Paquete: Axial	En existencias7.744	400V	1.2A	1.8V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	500µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
BYG10DHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paquete: DO-214AC, SMA	En existencias6.512	200V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BY520-16E-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 500MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Paquete: DO-204AL, DO-41, Axial	En existencias2.688	1600V	500mA	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
EGL41A-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Paquete: DO-213AB, MELF (Glass)	En existencias4.608	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SE15FJHM3/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.5A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 900ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	Paquete: DO-219AB	En existencias3.104	600V	1.5A	1.05V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	900ns	5µA @ 600V	10.5pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
SRT13 A1G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 125°C	Paquete: T-18, Axial	En existencias2.288	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
BYG20G R3G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1.5A, 400 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paquete: DO-214AC, SMA	En existencias4.640	400V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
VS-15ETH06PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Paquete: TO-220-2	En existencias18.840	600V	15A	2.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
BAT54GWX	Nexperia USA Inc.	BAS21GW/SOD123/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 400mV @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -	Paquete: SOD-123	En existencias27.180	30V	-	400mV @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	-	10pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	-
UF4002	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	Paquete: DO-204AL, DO-41, Axial	En existencias720.000	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
VS-15ETL06-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 270ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Paquete: TO-220-2	En existencias19.152	600V	15A	1.05V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	270ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
DB3X407K0L	Panasonic Electronic Components	DIODE SCHOTTKY 40V 500MA MINI3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.6ns Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: 10.5pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G3-B Operating Temperature - Junction: 125°C (Max)	Paquete: TO-236-3, SC-59, SOT-23-3	En existencias1.409.040	40V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	3.6ns	100µA @ 35V	10.5pF @ 10V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G3-B	125°C (Max)
RB521S-30LDTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SS220Q-LTP	Micro Commercial Co	SCHOTTKY BARRIER RECTIFIERS 200V Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	Paquete: -	En existencias29.634	200 V	2A	900 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 200 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
B3100BE-13-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 100 V Capacitance @ Vr, F: 105pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	Paquete: -	Request a Quote	100 V	3A	790 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 100 V	105pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
SDT5H100SB-13	Diodes Incorporated	DIODE SCHOTTKY 100V 5A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	Paquete: -	En existencias26.079	100 V	5A	620 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
SBR12U100P5Q-13	Diodes Incorporated	DIODE SBR 100V 12A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C	Paquete: -	En existencias14.376	100 V	12A	780 mV @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	250 µA @ 100 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-55°C ~ 150°C
1N4148WT-AQ	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 125mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C	Paquete: -	Request a Quote	80 V	125mA	1 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 150°C
SR202-BP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 20 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -50°C ~ 125°C	Paquete: -	Request a Quote	20 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-50°C ~ 125°C
SBX2050	Diotec Semiconductor	DIODE SCHOTTKY 50V 20A P600 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	Paquete: -	Request a Quote	50 V	20A	610 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Through Hole	P600, Axial	P600	-50°C ~ 150°C
S8K-E3-H	Vishay	8A, 800V, STD RECT, SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.6 µs Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Paquete: -	Request a Quote	800 V	1.6A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	3.6 µs	10 µA @ 800 V	72pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
JAN1N5806US-TR	Microchip Technology	DIODE GEN PURP 150V 2.5A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	Paquete: -	Request a Quote	150 V	2.5A	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
P2000M	Diotec Semiconductor	DIODE P600 1000V 20A 150C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	Paquete: -	Request a Quote	1000 V	20A	1.1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1000 V	-	Through Hole	P600, Axial	P600	-50°C ~ 150°C
1N1351	Microchip Technology	STANDARD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

MUR1560

ON Semiconductor

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: TO-220-2

En existencias210.636

600V

15A

1.5V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

A190RP

Powerex Inc.

DIODE GEN PURP REV 1KV DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 250A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 200°C

Paquete: DO-205AB, DO-9, Stud

En existencias3.440

1000V

250A

1.3V @ 250A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

-

-40°C ~ 200°C

HCR4148MTXV

TT Electronics/Optek Technology

DIODE GEN PURP 100V 200MA 3SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD
Operating Temperature - Junction: -65°C ~ 200°C

Paquete: 3-SMD, No Lead

En existencias3.136

100V

200mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 75V

2.8pF @ 1.5V, 1MHz

Surface Mount

3-SMD, No Lead

3-SMD

-65°C ~ 200°C

VS-8EWS12STRR-M3

Vishay Semiconductor Diodes Division

DIODE RECTIFIER 1200V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

En existencias2.256

1200V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-55°C ~ 150°C

RG 10

Sanken

DIODE GEN PURP 400V 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 500µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

Paquete: Axial

En existencias7.744

400V

1.2A

1.8V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

500µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

BYG10DHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

En existencias6.512

200V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 200V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

BY520-16E-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 500MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AL, DO-41, Axial

En existencias2.688

1600V

500mA

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

EGL41A-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-213AB, MELF (Glass)

En existencias4.608

50V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

20pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SE15FJHM3/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-219AB

En existencias3.104

600V

1.5A

1.05V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

900ns

5µA @ 600V

10.5pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

SRT13 A1G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 125°C

Paquete: T-18, Axial

En existencias2.288

30V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Through Hole

T-18, Axial

TS-1

-55°C ~ 125°C

BYG20G R3G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1.5A, 400

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

En existencias4.640

400V

1.5A

1.4V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

1µA @ 400V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

VS-15ETH06PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: TO-220-2

En existencias18.840

600V

15A

2.2V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

50µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

BAT54GWX

Nexperia USA Inc.

BAS21GW/SOD123/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 400mV @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -

Paquete: SOD-123

En existencias27.180

30V

-

400mV @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10pF @ 1V, 1MHz

Surface Mount

SOD-123

-

UF4002

Fairchild/ON Semiconductor

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-204AL, DO-41, Axial

En existencias720.000

100V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 100V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

VS-15ETL06-N3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: TO-220-2

En existencias19.152

600V

15A

1.05V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

270ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

DB3X407K0L

Panasonic Electronic Components

DIODE SCHOTTKY 40V 500MA MINI3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.6ns
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: 10.5pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
Operating Temperature - Junction: 125°C (Max)

Paquete: TO-236-3, SC-59, SOT-23-3

En existencias1.409.040

40V

500mA

550mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

3.6ns

100µA @ 35V

10.5pF @ 10V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G3-B

125°C (Max)

RB521S-30LDTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

Request a Quote

-

SS220Q-LTP

Micro Commercial Co

SCHOTTKY BARRIER RECTIFIERS 200V

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

En existencias29.634

200 V

2A

900 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 µA @ 200 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

B3100BE-13-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

Request a Quote

100 V

3A

790 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 100 V

105pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

SDT5H100SB-13

Diodes Incorporated

DIODE SCHOTTKY 100V 5A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

En existencias26.079

100 V

5A

620 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

SBR12U100P5Q-13

Diodes Incorporated

DIODE SBR 100V 12A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 12 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

En existencias14.376

100 V

12A

780 mV @ 12 A

Standard Recovery >500ns, > 200mA (Io)

-

250 µA @ 100 V

-

Surface Mount

PowerDI™ 5

-55°C ~ 150°C

1N4148WT-AQ

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 125mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

Request a Quote

80 V

125mA

1 V @ 50 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

1 µA @ 75 V

2pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-55°C ~ 150°C

SR202-BP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 125°C

Paquete: -

Request a Quote

20 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 20 V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-50°C ~ 125°C

SBX2050

Diotec Semiconductor

DIODE SCHOTTKY 50V 20A P600

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

Paquete: -

Request a Quote

50 V

20A

610 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

-

Through Hole

P600, Axial

P600

-50°C ~ 150°C

S8K-E3-H

Vishay

8A, 800V, STD RECT, SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.6 µs
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

Request a Quote

800 V

1.6A

975 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

3.6 µs

10 µA @ 800 V

72pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

JAN1N5806US-TR

Microchip Technology

DIODE GEN PURP 150V 2.5A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

Request a Quote

150 V

2.5A

975 mV @ 2.5 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 150 V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

P2000M

Diotec Semiconductor

DIODE P600 1000V 20A 150C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

Paquete: -

Request a Quote

1000 V

20A

1.1 V @ 20 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 1000 V

-

Through Hole

P600, Axial

P600

-50°C ~ 150°C

1N1351

Microchip Technology

STANDARD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

Request a Quote

-

Diodos - Rectificadores - Simple

Diodos - Rectificadores - Simple